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US 2007/0164336 A1Published application
Spin fet and spin memory
AssigneeKabushiki Kaisha Toshiba
InventorsYoshiaki Saito, Hideyuki Sugiyama, Tomoaki Inokuchi
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Abstract
A spin FET according to an example of the present invention includes a magnetic pinned layer whose magnetization direction is fixed, a magnetic free layer whose magnetization direction is changed, a channel between the magnetic pinned layer and the magnetic free layer, a gate electrode provided on the channel via a gate insulation layer, and a multiferroric layer which is provided on the magnetic free layer, and whose magnetization direction is changed by an electric field.
Claims56
A spin FET comprising:
- a magnetic pinned layer whose magnetization direction is fixed;
- a magnetic free layer whose magnetization direction is changed;
- a channel between the magnetic pinned layer and the magnetic free layer;
- a gate electrode provided on the channel via a gate insulation layer;
- and
- a multiferroric layer which is provided on the magnetic free layer, and whose magnetization direction is changed by an electric field.
3 more elements
A spin FET comprising:
- a magnetic pinned layer whose magnetization direction is fixed;
- a magnetic free layer comprising a multiferroric layer whose magnetization direction is changed by an electric field;
- a channel between the magnetic pinned layer and the magnetic free layer;
- and
- a gate electrode provided on the channel via a gate insulation layer.
2 more elements
A spin memory comprising:
- a magnetic pinned layer whose magnetization direction is fixed;
- a magnetic free layer whose magnetization direction is changed;
- a tunnel barrier layer between the magnetic pinned layer and the magnetic free layer;
- and
- a multiferroric layer which is provided adjacent to the magnetic free layer, and whose magnetization direction is changed by an electric field.
2 more elements
A spin memory comprising:
- a magnetic pinned layer whose magnetization direction is fixed;
- a magnetic free layer comprising a multiferroric layer whose magnetization direction is changed by an electric field;
- and
- a tunnel barrier layer between the magnetic pinned layer and the magnetic free layer.
1 more element
Dependencies are inferred from the claim text.