Integrated mis photosensitive device using continuous films

An apparatus including an integrated photosensitive device, comprising:

• a substrate;
• and
• a metal-insulator-semiconductor (MIS) photodiode at least a portion of which is disposed over said substrate and comprising
• a plurality of conduction layers including at least first, second and third conduction layers comprising first, second and third films of conductive material, respectively,
• one or more insulation layers at least a portion of at least one of which is disposed between said first and second conduction layers, wherein at least one of said one or more insulation layer portions comprises a respective at least substantially continuous film of insulation material, and
• one or more semiconductor layers at least a portion of at least one of which is disposed between one of said one or more insulation layers and one of said first and second conduction layers, wherein at least one of said one or more semiconductor layer portions comprises a respective at least substantially continuous film of semiconductor material,
• wherein one of said first and second conduction layers includes a perimeter, and said third conduction layer is disposed, at least in part, in a non-coplanar manner along part of said perimeter.

An apparatus including an integrated photosensitive array, comprising:

• a substrate;
• and
• a plurality of metal-insulator-semiconductor (MIS) photodiodes at least a portion of which is disposed in an array over said substrate with each one of said at least a portion of said plurality of MIS photodiodes comprising
• first and second electrodes,
• one or more dielectrics at least a portion of at least one of which is disposed between said first and second electrodes, wherein at least one of said one or more dielectric portions comprises a respective at least substantially continuous layer of dielectric material,
• one or more semiconductors at least a portion of at least one of which is disposed between one of said one or more dielectrics and one of said first and second electrodes, wherein at least one of said one or more semiconductor portions comprises a respective at least substantially continuous layer of semiconductor material, and
• a third electrode a portion of which is disposed, at least in part, in a non-coplanar manner along a peripheral portion of one of said first and second electrodes.

An apparatus including an integrated photosensitive device, comprising:

• a substrate;
• and
• a metal-insulator-semiconductor (MIS) photodiode at least a portion of which is disposed over said substrate and comprising
• first and second electrodes,
• one or more dielectrics at least a portion of at least one of which is disposed between said first and second electrodes, wherein at least one of said one or more dielectric portions comprises a respective at least substantially continuous layer of dielectric material,
• one or more semiconductors at least a portion of at least one of which is disposed between one of said one or more dielectrics and one of said first and second electrodes, wherein at least one of said one or more semiconductor portions comprises a respective at least substantially continuous layer of semiconductor material, and
• a third electrode substantially bordering one of said first and second electrodes with a portion of said third electrode disposed, at least in part, in a non-coplanar manner along a peripheral portion of one of said first and second electrodes.

An apparatus including an integrated photosensitive device, comprising:

• a substrate;
• and
• a metal-insulator-semiconductor (MIS) photodiode at least a portion of which is disposed over said substrate and comprising
• first and second electrodes,
• one or more dielectrics at least a portion of at least one of which is disposed between said first and second electrodes,
• one or more semiconductors at least a portion of at least one of which is disposed between one of said one or more dielectrics and one of said first and second electrodes, and
• a third electrode a portion of which is disposed, at least in part, in a non-coplanar manner along a peripheral portion of one of said first and second electrodes.

An apparatus including an integrated photosensitive device, comprising:

• a substrate;
• and
• a metal-insulator-semiconductor (MIS) photodiode at least a portion of which is disposed over said substrate and comprising
• a plurality of conduction layers including at least first, second and third conduction layers comprising first, second and third films of conductive material, respectively,
• one or more insulation layers at least a portion of at least one of which is disposed between said first and second conduction layers, and
• one or more semiconductor layers at least a portion of at least one of which is disposed between one of said one or more insulation layers and one of said first and second conduction layers,
• wherein one of said first and second conduction layers includes a perimeter, and said third conduction layer is disposed, at least in part, in a non-coplanar manner along part of said perimeter.

An apparatus including an integrated photosensitive array, comprising:

• a substrate;
• and
• a plurality of metal-insulator-semiconductor (MIS) photodiodes at least a portion of which is disposed in an array over said substrate with each one of said at least a portion of said plurality of MIS photodiodes comprising
• first and second electrodes,
• one or more dielectrics at least a portion of at least one of which is disposed between said first and second electrodes,
• one or more semiconductors at least a portion of at least one of which is disposed between one of said one or more dielectrics and one of said first and second electrodes, and
• a third electrode a portion of which is disposed, at least in part, in a non-coplanar manner along a peripheral portion of one of said first and second electrodes.