Display substrate and method of manufacturing the same

A method of manufacturing a display substrate, the method comprising:

• forming a source metal layer including a first metal layer and a second metal layer on a base substrate, on which a first metal pattern including a gate line and a gate electrode, a gate insulating layer and a channel layer are formed in sequence;
• etching the source metal layer using a photoresist pattern to form a second metal pattern including an electrode pattern and a source line;
• cleaning the second metal pattern using a cleaning liquid which selectively etches the second metal layer to etch a side surface of the second metal layer by a predetermined amount;
• ashing the photoresist pattern by a predetermined amount so that the photoresist pattern has substantially a same width as a width of the second metal layer;
• dry etching a portion of the first metal layer and the channel layer using the photoresist pattern, the portion of the first metal layer and the channel layer protruding with respect to the second metal layer;
• partially etching the electrode pattern to form a switching element including a source electrode, a drain electrode and a channel portion;
• forming a passivation layer on the base substrate having the switching element;
• and
• forming a pixel electrode electrically connected to the drain electrode.

A method of manufacturing a display substrate, the method comprising:

• forming a gate insulating layer, an active layer, an ohmic contact layer and a source metal layer including a first metal layer and a second metal layer on a base substrate on which a first metal pattern including a gate line and a gate electrode is formed;
• patterning the source metal layer using a photoresist pattern to form a second metal pattern including an electrode pattern and a source line;
• cleaning the second metal pattern by using a cleaning liquid that selectively etches the second metal layer;
• removing the photoresist pattern so that the photoresist pattern has substantially a same width as a width of the second metal layer;
• dry etching a portion of the first metal layer, the active layer and the ohmic contact layer using the photoresist pattern;
• removing a predetermined thickness of the photoresist pattern to expose a portion of the electrode pattern;
• partially etching the exposed portion of the electrode pattern to form a source electrode and a drain electrode of the switching element;
• etching the ohmic contact layer using the source and drain electrodes as an etching mask to expose a portion of the active layer;
• forming a passivation layer partially exposing the drain electrode;
• and
• forming a pixel electrode electrically connected to the drain electrode.