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OwnerYasuhiro Okamoto, Yuji Ando +4inventors
InventorsYasuhiro Okamoto, Yuji Ando, Hironobu Miyamoto, Tatsuo Nakayama, Takashi Inque, Masaaki Kuzuhara
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A field effect transistor includes a semiconductor layer structure including GaN channel layer 12 and AlGa electron supply layer 13, source electrode 1 and drain electrode 3 which are formed on electron supply layer 13 so as to be separated from each other, gate electrode 2 formed between source electrode 1 and drain electrode 3, and SiON film 23 formed on electron supply layer 13. Gate electrode 2 has a field plate portion 5 that projects toward drain electrode 3 in the form of an eave on SiON film 23. The thickness of a portion (field plate layer 23a) of SiON film 23 lying between field plate portion 5 and electron supply layer 13 gradually increases from gate electrode 2 to drain electrode 3.
A field effect transistor comprising a III group nitride semiconductor layer structure including hetero junction, a source electrode and a drain electrode that are so formed on said semiconductor layer structure as to be separated each other, a gate electrode formed between said source electrode and said drain electrode, and an insulating film formed on said semiconductor layer structure, characterized in that
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