CMOS gates with intermetallic compound tunable work functions
AssigneeMicron Technology, Inc.
InventorsLeonard Forbes, Paul Farrar, Kie Ahn
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Abstract
Gates of at least one of NMOS transistors and PMOS transistors of a CMOS integrated circuit are formed with an intermetallic compound. The work function of the gate electrode is tunable by controlling the selection of the metals that form a layer of the intermetallic compound. In one embodiment, a layer of each metal is deposited onto the gate area of a MOS transistor. At least one metal is deposited using atomic layer deposition. The intermetallic compound is formed by annealing subsequent to the deposition of the metals.
Claims39
A CMOS device, comprising:
- NMOS transistors each including an NMOS gate;
- and
- PMOS transistors each including a PMOS gate,
- wherein at least one of the NMOS gate and the PMOS gate includes a layer of intermetallic compound of a first metal and a second metal, the layer of intermetallic compound formed by depositing a layer of the first metal, depositing a layer of the second metal on the layer of the first metal, and annealing.
A CMOS device, comprising:
- first type MOS transistors each including:
- a gate including a layer of intermetallic compound of a first metal and a second metal;
- and
- a conducting layer in contact with the layer of intermetallic compound.
A method for producing a CMOS device, the method comprising:
- forming an NMOS gate for an NMOS transistor;
- and
- forming a PMOS gate for a PMOS transistor,
- wherein at least one of forming the NMOS gate and forming the PMOS gate includes:
- forming a first metal layer by depositing the first metal;
- forming a second metal layer on the first metal layer by depositing the second metal;
- and
- forming a layer of intermetallic compound by annealing.
A method for producing a CMOS device, the method comprising:
- selecting a first metal and a second metal for a specified threshold voltage of first type transistors, the first metal and the second metal capable of forming an intermetallic compound;
- depositing a layer of the first metal to form a gate for each of the first type transistors;
- depositing a layer of the second metal on the layer of the first metal for the each of the first type transistors;
- and
- performing annealing to form a layer of the intermetallic compound with the layer of the first metal and the layer of the second metal.
Dependencies are inferred from the claim text.