Methods of fabricating transistors including supported gate electrodes and related devices
AssigneeCree, Inc.
InventorsScott Sheppard, Scott Allen
Life of this patent
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Abstract
Transistors are fabricated by forming a protective layer having an opening extending therethrough on a substrate, and forming a gate electrode in the opening. A first portion of the gate electrode laterally extends on surface portions of the protective layer outside the opening, and a second portion of the gate electrode is spaced apart from the protective layer and laterally extends beyond the first portion. Related devices. and fabrication methods are also discussed.
Claims31
A method of fabricating a transistor, the method comprising:
- forming a protective layer, the protective layer having an opening extending therethrough;
- and
- forming a gate electrode in the opening so that a first portion of the gate electrode laterally extends on surface portions of the protective layer outside the opening and so that a second portion of the gate electrode spaced apart from the protective layer laterally extends beyond the first portion.
A method of fabricating a transistor, the method comprising:
- forming a first layer, wherein the first layer comprises a dielectric material;
- forming a second layer on the first layer, wherein the second layer has a hole therein exposing a portion of the first layer;
- forming a first opening extending through the first layer using the second layer as a mask;
- after forming the first opening, widening the hole in the second layer to form a second opening exposing the first opening and exposing surface portions of the first layer on opposite sides of the first opening;
- and
- forming a gate electrode in the first and second openings, wherein first portions of the gate electrode extend on surface portions of the first layer outside the first opening and second portions of the gate electrode extend on surface portions of the second layer outside the second opening.
A transistor, comprising:
- a protective layer having an opening extending therethrough;
- and
- a gate electrode in the opening, wherein the gate electrode includes a first portion laterally extending on surface portions of the protective layer outside the opening and a second portion spaced apart from the protective layer and laterally extending beyond the first portion.
31-37. (canceled)
Dependencies are inferred from the claim text.