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US 2007/0164320 A1Published application
Tunable semiconductor component provided with a current barrier
AssigneeTechnologies Ltrim Inc.
InventorsAlain Lacourse, Mathieu Ducharme, Hugo St-Jean, Yves Gagnon, Yvon Savaria, Michel Meunier
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Abstract
Semiconductor component or device is provided which includes a current barrier element and for which the impedance may be tuned (i.e. modified, changed, etc.) using a focused heating source.
Claims7
An impedance tunable semiconductor component, said semiconductor component comprising
- a first conductive region, and
- a second region
- said first conductive region comprising a first type dopant composition
- said second region comprising a second type dopant composition
- said first conductive region and said second region being contiguous,
- said first conductive region defining a laid down base conductive path,
- said second type dopant composition having a dopant profile configured to render said second type dopant composition non-conductive relative to said first type dopant composition
- said first conductive region comprising a first link member and a second link member,
- said first and second link members being disposed in juxtaposition such that said first and second link members are separated by a gap region defined by said second region,
- said first conductive region having a heat modifiable dopant profile,
- said second region having a heat modifiable dopant profile, at least with respect to said gap region,
- characterised in that said semiconductor component further comprises a laid down current mask region disposed between and spaced apart from said first link member and said second link member, said current mask region having a heat modifiable dopant profile, and wherein said current mask region comprises a third type dopant composition different from that of said first and second type dopant compositions such that said current mask region interrupts said gap region for offsetting leakage of electrical current across the gap region between the first link member and the second link member.
9 more elements
An impedance tuneable semiconductor component, said semiconductor component comprising
- a first conductive region defining a first discrete laid down base path for electrical conduction, said first region being a doped region having a heat modifiable dopant profile.
- a second conductive region defining a second discrete laid down base path for electrical conduction, said second region being a doped region having a heat modifiable dopant profile and
- a third region contiguous with the first and second regions and being a doped region having a dopant profile rendering said third region electrically non-conductive relative to said first and second regions,
- at least a potion of said second discrete laid down base path being disposed in juxtaposition with said first discrete laid down base path such that said first and second discrete laid down base paths are thereby separated by a gap region defined by said third region,
- said third region having a heat modifiable dopant profile, at least with respect to said gap region,
- said first conductive region having a pair of electrical contact means for electrically connecting the first conductive region to two or more electrical elements,
- said second conductive region having an electrical contact means for electrically connecting the second conductive region to one or more electrical elements.
4 more elements
Dependencies are inferred from the claim text.