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US 2007/0164316 A1Published application
Heterojunction bipolar transistor and method for manufacturing the same, and power amplifier using the same
AssigneeRenesas Technology Corp.
InventorsIsao Ohbu, Chushiro Kusano, Yasunari Umemoto, Atsushi Kurokawa
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Abstract
A heterojunction bipolar transistor with InGaP as the emitter layer and capable of both reliable electrical conduction and thermal stability wherein a GaAs layer is inserted between the InGaP emitter layer and AlGaAs ballast resistance layer, to prevent holes reverse-injected from the base layer from diffusing and reaching the AlGaAs ballast resistance layer.
Claims5
1-12. (canceled)
A heterojunction bipolar transistor having a sequentially formed structure comprising:
- an InGaP emitter layer;
- a GaAs base layer forming a heterojunction together with the InGaP emitter layer on one side of the InGaP emitter layer;
- a GaAs layer lying on the other side of the InGaP emitter layer than the GaAs base layer;
- and
- an AlGaAs ballast resistance layer lying opposite to the InGaP emitter layer across the GaAs layer.
2 more elements
Dependencies are inferred from the claim text.