Nitrogen polar III-nitride heterojunction JFET

1. A III-nitride power semiconductor device, comprising:

• an N-polar III-nitride body having an N-polar face;
• a III-nitride buffer layer on said N-polar face;
• a III-nitride heterojunction that includes III-nitride barrier layer, and a III-nitride channel layer, said III-nitride heterojunction including a two-dimensional electron gas (2DEG);
• a first power electrode disposed over said heterojunction and coupled to said 2DEG;
• a second power electrode disposed over said heterojunction and coupled to said 2DEG;
• and
• a gate arrangement disposed over said heterojunction between said first and said second power electrode and including a P-type III-nitride body, and a gate electrode, said P-type III-nitride body being disposed between said heterojunction and said gate contact.