Electronic devices formed of high-purity molybdenum oxide
OwnerTakashi Katodainventor
Life of this patent
Estimating the term…
Abstract
The present invention is directed to electronic devices comprising high-purity molybdenum oxide in at least a part of the devices. The devices according to the present invention such as a bipolar transistor, a field effect transistor and a thyristor have a high withstand voltage. The present invention is directed also hostile-environment electron devices formed using high-purity molybdenum oxide. The devices according to the present invention can be fabricated at a relatively lower temperature such as 700° C. than that at which GaN or SiC devices are fabricated, that is a temperature higher 1000° C.
Claims4
A semiconductor electronic device wherein high-purity molybdenum oxide is used at least in a substantial part.
Dependencies are inferred from the claim text.