Ingaas/gaas lasers on-silicon produced by-lepecvd and mocvd

Method for making an InGaAs/GaAs quantum well laser (10) on a Silicon substrate (15.1), the method comprising the following steps:

• formation of a virtual Germanium substrate (15) on the Silicon substrate (15.1) by means of a low-energy plasma-enhanced chemical vapour deposition (LEPECVD) process, whereby said virtual Germanium substrate (15) comprises a pure Germanium layer (15.3;
• 15.4), said Germanium layer (15.3;
• 15.4) having a thickness between 0.5 μm and 2 μm,
• formation of a Gallium Arsenide structure on the virtual Germanium substrate (15) by means of a metal organic chemical vapour deposition process, said metal organic chemical vapour deposition process comprising
• an initial step for the formation of a first Gallium Arsenide layer (16;
• 21) on said virtual Germanium substrate (15) at a first substrate temperature (Ts1),
• a second step for the formation of a second Gallium Arsenide waveguide layer (17) at a second substrate temperature (Ts2), said second substrate temperature (Ts2) being higher than said first substrate temperature (Ts1) and said first Gallium Arsenide layer (16;
• 21) being thinner than said second Gallium Arsenide layer (17), and
• subsequent steps for the formation of an active laser structure comprising a Gallium Arsenide waveguide layer (12) embedding a quantum well (11).