Semiconductor device and method of fabricating the same

A semiconductor device comprising:

• a semiconductor substrate;
• an insulating layer on the semiconductor substrate;
• a transistor on the insulating layer, the transistor comprising a source region, a drain region, a gate electrode and a gate insulating film;
• a leveling film over the transistor;
• a storage capacitance over the leveling film, the storage capacitance comprising a first electrode, an insulating film and a second electrode;
• an interlayer insulating film over the storage capacitance;
• a third electrode containing a metal over the interlayer insulating film;
• an EL layer over the third electrode;
• and
• a forth electrode which is a transparent conductive film over the EL layer.

A semiconductor device comprising:

• a semiconductor substrate;
• an insulating layer on the semiconductor substrate;
• a transistor on the insulating layer, the transistor comprising a source wirings region, a drain region, a gate electrode and a gate insulating film;
• a leveling film over the transistor;
• a source wirings wiring and a drain wiring over the leveling film, the source wirings wiring being electrically connected with the source region and the drain wiring being electrically connected with the drain region;
• a first interlayer insulating film over the source wiring and the drain wiring;
• a storage capacitance over the first interlayer insulating film, the storage capacitance comprising a first electrode, an insulating film and a second electrode;
• a second interlayer insulating film over the storage capacitance;
• a third electrode containing a metal over the second interlayer insulating film;
• an EL layer over the third electrode;
• and
• a forth electrode which is a transparent conductive film over the EL layer.

A semiconductor device comprising:

• a semiconductor substrate;
• an insulating layer on the semiconductor substrate;
• a transistor on the insulating layer, the transistor comprising a source region, a drain region, an LDD region, a gate electrode and a gate insulating film;
• a leveling film over the transistor;
• a storage capacitance over the leveling film, the storage capacitance comprising a first electrode, an insulating film and a second electrode;
• an interlayer insulating film over the storage capacitance;
• a third electrode containing a metal over the interlayer insulating film;
• an EL layer over the third electrode;
• and
• a forth electrode which is a transparent conductive film over the EL layer.

A semiconductor device comprising:

• a semiconductor substrate;
• an insulating layer on the semiconductor substrate;
• a transistor on the insulating layer, the transistor comprising a source wirings region, a drain region, an LDD region, a gate electrode and a gate insulating film;
• a leveling film over the transistor;
• a source wiring and a drain wiring over the leveling film, the source wiring being electrically connected with the source region and the drain wiring being electrically connected with the drain region;
• a first interlayer insulating film over the source wiring and the drain wiring;
• a storage capacitance over the first interlayer insulating film, the storage capacitance comprising a first electrode, an insulating film and a second electrode;
• a second interlayer insulating film over the storage capacitance;
• a third electrode containing a metal over the second interlayer insulating film;
• an EL layer over the third electrode;
• and
• a forth electrode which is a transparent conductive film over the EL layer.