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US 2007/0164284 A1Published application
Thin film transistor array substrate and method for manufacturing the same
AssigneeLG. Philips LCD Co., Ltd.
InventorsYong In Park, Jae Young Oh, SooPool Kim
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Abstract
A thin film transistor array substrate and a method for manufacturing the thin film transistor array substrate are disclosed. Specifically, a thin film transistor array may be formed using a reduced number of masks.
Claims37
A thin film transistor array substrate comprising:
- gate lines and data lines crossing each other to define pixel regions on a substrate;
- a plurality of thin film transistors disposed adjacent to each crossing point of one of the gate lines and one of the data lines, each thin film transistor including a gate electrode protruded from the gate line, a source electrode protruded from the data line, and a drain electrode located adjacent the source electrode;
- a plurality of pixel electrodes on the pixel regions, being adjacent the drain electrode;
- and
- a plurality of transparent electrode patterns located adjacent one of the data lines, wherein the source electrodes protrude from the data line.
2 more elements
A thin film transistor array substrate comprising:
- a plurality of gate lines;
- a plurality of data lines crossing the plurality of gate lines, wherein one of the plurality of gate lines crosses one of the plurality of data lines to establish pixel regions on a substrate;
- a plurality of common lines disposed substantially parallel with the gate lines;
- a plurality of thin film transistors disposed adjacent to crossing points of the gate lines and the data lines, wherein each thin film transistor comprises a gate electrode protruding from the gate line, a source electrode protruding from the data line, and a drain electrode adjacent the source electrode;
- a plurality of first storage electrodes, wherein at least one of the plurality of first storage electrodes is disposed on at least one of the drain electrodes;
- a plurality of pixel electrodes disposed to extend from one of the first storage electrodes in each pixel region;
- a plurality of transparent electrode patterns configured to be located apart from the first storage electrode and in contact with the source electrode;
- and
- a plurality of common electrodes disposed in each pixel region and alternating with the pixel electrodes.
6 more elements
A method for manufacturing a thin film transistor array substrate comprising:
- forming gate lines and gate electrodes on a substrate;
- depositing a gate insulating layer, a semiconductor formation layer, and a data metal layer on a surface of the substrate including the gate lines and the gate electrodes;
- removing at least part of the data metal layer, the semiconductor formation layer, and the gate insulating layer, such that data lines extend substantially perpendicular to the gate lines;
- depositing a transparent electrode layer over a surface of the substrate including the data lines;
- and
- removing at least part of the transparent electrode layer, the data metal layer, and the semiconductor formation layer to a predetermined depth.
3 more elements
A method for manufacturing a thin film transistor array substrate comprising:
- forming gate lines, gate electrodes, and gate pad patterns on a substrate;
- depositing a gate insulating layer, a semiconductor formation layer, and a data metal layer over an upper surface of the substrate;
- selectively removing at least a part of the data metal layer, the semiconductor formation layer, and the gate insulating layer to form data lines extending substantially perpendicular to the gate lines, wherein semiconductor formation layer regions remain;
- depositing a transparent electrode layer over an upper surface of the substrate;
- and
- removing the transparent electrode layer, the data metal layer, and the semiconductor formation layer to a predetermined depth such that semiconductor layers and source and drain electrodes are disposed in respective semiconductor formation layer regions.
3 more elements
A method for manufacturing a thin film transistor array substrate, comprising:
- disposing gate lines and common lines extending in substantially the same direction on a substrate;
- disposing common electrodes, gate electrodes, and gate pad patterns on the substrate;
- depositing a gate insulating layer, a semiconductor formation layer, and a data metal layer on a surface of the substrate including the gate lines, the common lines, the common electrodes, the gate electrodes, and the gate pad patterns;
- selectively removing at least part of the data metal layer, the semiconductor layer formation layer, and the gate insulating layer to form data lines extending substantially perpendicular to the gate lines, wherein semiconductor layer formation regions are established by the selective removal;
- depositing a transparent electrode layer over a surface of the substrate including the data lines;
- and
- removing at least part of the transparent electrode layer, the data metal layer, and the semiconductor formation layer to a predetermined depth, wherein the removal of at least part of the transparent electrode layer establishes semiconductor layers, source electrodes and drain electrodes in respective semiconductor layer formation regions.
4 more elements
Dependencies are inferred from the claim text.