Input display
AssigneeHannstar Display Corp.
InventorPo-Sheng Shih
Life of this patent
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Abstract
An input display is provided in the present invention. The input display includes a thin film transistor (TFT) and a light blocking layer. The TFT includes a low-field electrode, a high-field electrode connected to the low-field electrode with a connecting section, and a field-effect area positioned on the connecting section and connected to the high-field electrode, wherein a PN junction field is formed in the field-effect area when the TFT is switched off. The light blocking layer corresponds to the high-field electrode and hides the field-effect area from all incident light from the TFT.
Claims26
An input display, comprising:
- a transistor comprising:
- a low-field electrode;
- a high-field electrode connected to said low-field electrode with a connecting section;
- and
- a field-effect area positioned on said connecting section and connected to said high-field electrode, wherein a PN junction field is formed in said field-effect area when said transistor is switched off;
- and
- a light blocking layer corresponding to said high-field electrode and hiding said field-effect area from all incident light from said transistor.
A pixel unit, comprising:
- a transistor comprising:
- a low-field electrode;
- a high-field electrode connected to said low-field electrode with a connecting section;
- and
- a field-effect area positioned on said connecting section and connected to said high-field electrode, wherein a PN junction field is formed in said field-effect area when said transistor is switched off;
- and
- a light blocking layer corresponding to said high-field electrode and hiding said field-effect area from all incident light from said TFT.
An elimination method for a photo-induced leakage current of an input display, comprising steps of:
- providing a transistor comprising a low-field electrode, a high-field electrode connected to said low-field electrode with a connecting section, and a field-effect area positioned on said connecting section and connected to said high-field electrode;
- and
- hiding said field-effect area from all incident light from said TFT so that said photo-induced leakage current produced by a plurality of electrons influenced by said incident light and said PN junction field formed in said field-effect area when said transistor is switched off is eliminated.
Dependencies are inferred from the claim text.