Thin film transistor, manufacturing method for thin film transistor and manufacturing method for display device

A thin film transistor comprising:

• a gate electrode;
• a semiconductor including a source region, a drain region and a channel forming region formed over the gate electrode;
• and
• a protective layer comprising an organic resin,
• wherein the protective layer is selectively formed over the channel forming region.

A thin film transistor comprising:

• a gate electrode;
• a semiconductor including a source region, a drain region and a channel forming region formed over the gate electrode;
• and
• a protective layer comprising an organic resin,
• wherein the protective layer is formed in contact with at least the channel forming region.

A manufacturing method of a thin film transistor comprising the steps of:

• forming a first electric conductor;
• forming a first insulator and a semiconductor over the first electric conductor in a laminating manner;
• forming a first pattern on the semiconductor;
• subjecting the semiconductor to patterning by using the first pattern;
• forming a second pattern on the patterned semiconductor,
• forming an impurity region by incorporating an impurity into the semiconductor by making use of the second pattern as a mask;
• and
• forming a second electric conductor in contact with the impurity region,
• wherein the first and second patterns are each formed by selectively discharging a composition comprising an organic resin, and
• wherein the first and second electric conductors are each formed by selectively discharging a composition comprising an electrically conductive material.

A manufacturing method of a thin film transistor comprising the steps of:

• forming a first electric conductor;
• forming a first pattern on the first electric conductor;
• subjecting the first electric conductor to patterning by making use of the first pattern;
• forming a first insulator and a semiconductor over the patterned first electric conductor in a laminating manner;
• forming a second pattern on the semiconductor;
• subjecting the semiconductor to pattering by making use of the second pattern;
• forming a third pattern on the patterned semiconductor;
• forming an impurity region by incorporating an impurity into the semiconductor by making use of the third pattern as a mask;
• and
• forming a second electric conductor on the impurity region,
• wherein the first to third patterns are each formed by selectively discharging a composition comprising an organic resin, and
• wherein the second electric conductor is formed by selectively discharging a composition comprising an electrically conductive material.

A manufacturing method of a thin film transistor comprising the steps of:

• forming a first electric conductor;
• forming a first pattern on the fist electric conductor;
• subjecting the first electric conductor to patterning by making use of the first pattern;
• forming a first insulator and a semiconductor over the patterned first electric conductor in a laminating manner;
• forming a second pattern on the semiconductor;
• subjecting the semiconductor to pattering by making use of the second pattern;
• forming a third pattern on the patterned semiconductor;
• forming an impurity region by incorporating an impurity into the semiconductor by making use of the third pattern as a mask;
• and
• forming a second electric conductor on the impurity region;
• forming a fourth pattern on the second electric conductor;
• and
• subjecting the second electric conductor to pattering by making use of the fourth pattern,
• wherein the first to fourth patterns are each formed by selectively discharging a composition comprising an organic resin.

A manufacturing method for a display device comprising the steps of:

• forming a pixel region in which a plurality of first semiconductor elements are arranged over a first substrate;
• forming a liquid crystal element between the first substrate and a second substrate;
• forming a plurality of driver ICs which each contains a driver circuit in which a plurality of second semiconductor elements are arranged, and each contains an input terminal and an output terminal connected to the driver circuit over a third substrate;
• separating the plurality of driver ICs into individual driver ICs;
• attaching the driver ICs over the first substrate each as a signal line driver circuit or a scanning line driver circuit,
• forming a pattern which subjects a semiconductor constituting the first semiconductor element to patterning by selectively discharging a composition comprising an organic resin;
• and
• forming a channel protective layer of the first semiconductor element by selectively discharging a composition comprising an organic resin.

A manufacturing method for a display device comprising the steps of:

• forming a pixel region in which a plurality of first semiconductor elements are arranged over a first substrate;
• forming a light-emitting element between the first substrate and a second substrate;
• forming a plurality of driver ICs which each contains a driver circuit in which a plurality of second semiconductor elements are arranged, and each contains an input terminal and an output terminal connected to the driver circuit over a third substrate;
• separating the plurality of driver ICs into individual driver ICs;
• attaching the driver ICs over the first substrate each as a signal line driver circuit or a scanning line driver circuit,
• forming a pattern which subjects a semiconductor constituting the first semiconductor element to patterning by selectively discharging a composition comprising an organic resin;
• and
• forming a channel protective layer of the first semiconductor element by selectively discharging a composition comprising an organic resin.