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US 2007/0164266 A1Published application
Semiconductor device and method of manufacturing the same
AssigneeDongbu Electronics Co., Ltd.
InventorKee Joon Choi
Life of this patent
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Abstract
There is provided a semiconductor device. The semiconductor device includes a lower electrode, a contact connected to the lower electrode to have a double trench structure, a phase change material layer accommodated in the double trench to cause a phase change between a crystalline state and an amorphous state in accordance with a change in heat transmitted by the contact, and an upper electrode connected to the phase change material layer.
Claims20
A semiconductor device comprising:
- a lower electrode;
- a contact connected to the lower electrode;
- a phase change material layer in the contact;
- and
- an upper electrode connected to the phase change material layer.
2 more elements
A method of manufacturing a semiconductor device, the method comprising the steps of:
- forming a first protective layer on a lower electrode;
- selectively etching the first protective layer to form a dual damascene trench and via hole;
- depositing a contact layer to fill the dual damascene trench and via hole, and polishing the contact layer to remove the contact layer from outside the dual damascene trench and via hole;
- partially etching the polished contact layer to form a second trench;
- depositing a phase change material to fill the second trench and polishing the phase change material to remove the phase change material from outside the second trench;
- and
- forming an upper metal layer connected to the phase change material.
4 more elements
Dependencies are inferred from the claim text.