Semiconductor memory device
AssigneeKabushiki Kaisha Toshiba
InventorTakeshi Kajiyama
Life of this patent
Estimating the term…
Abstract
A semiconductor memory device includes a first write line which is provided in a first direction, a first memory element which is connected to the first write line, a second memory element which is provided to neighbor the first memory element in the first direction, and is connected to the first write line, a first insulation film which is provided on surfaces of the first and second memory elements, and a second insulation film which is provided between the neighboring first and second memory elements and has a lower heat conductivity than the first insulation film.
Claims18
A semiconductor memory device comprising:
- a first write line which is provided in a first direction;
- a first memory element which is connected to the first write line;
- a second memory element which is provided to neighbor the first memory element in the first direction, and is connected to the first write line;
- a first insulation film which is provided on surfaces of the first and second memory elements;
- and
- a second insulation film which is provided between the neighboring first and second memory elements and has a lower heat conductivity than the first insulation film.
A semiconductor memory device comprising:
- a first write line which is provided in a first direction;
- a first memory element which is connected to the first write line;
- a second memory element which is provided to neighbor the first memory element in the first direction, and is connected to the first write line;
- an insulation film which is provided between the neighboring first and second memory elements;
- and
- an air gap which is provided in the insulation film and has a lower heat conductivity than the insulation film.
Dependencies are inferred from the claim text.