Charged particle beam apparatus and methods for capturing images using the same
AssigneeHitachi High-Technologies Corporation
InventorsChie Shishido, Mayuka Oosaki, Mitsugu Sato, Hiroki Kawada, Tatsuya Maeda
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AssigneeHitachi High-Technologies Corporation
InventorsChie Shishido, Mayuka Oosaki, Mitsugu Sato, Hiroki Kawada, Tatsuya Maeda
Estimating the term…
The present invention provides a charged particle beam apparatus used to measure micro-dimensions (CD value) of a semiconductor apparatus or the like which captures images for measurement. For the present invention, a sample for calibration, on which a plurality of polyhedral structural objects with known angles on surfaces produced by the crystal anisotropic etching technology are arranged in a viewing field, is used. A beam landing angle at each position within a viewing field is calculated based on geometric deformation on an image of each polyhedral structural object. Beam control parameters for equalizing the beam landing angle at each position within the viewing field are pre-registered. The registered beam control parameters are applied according to the position of the pattern to be measured within the viewing field when performing dimensional measurement. Accordingly, the present invention provides methods for reducing the variation in the CD value caused by the variation in the electron beam landing angle with respect to the sample with an equal beam landing angle and methods for reducing the instrumental error caused by the difference in the electron beam landing angle between apparatuses.
A method for imaging a sample by use of a charged particle beam apparatus, the method comprising the steps of:
A method for imaging a sample by use of a charged particle beam apparatus, the method comprising the steps of:
A charged particle beam apparatus comprising:
A charged particle beam apparatus comprising:
Dependencies are inferred from the claim text.