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US 2007/0163998 A1Published application
Composition for polishing semiconductor layers
OwnerJinru Bianinventor
Life of this patent
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Abstract
The aqueous polishing composition is useful for polishing semiconductor substrates. The polishing composition includes 0.05 to 50 weight percent abrasive; and 0.001 to 2 weight percent lambda type carrageenan, the lambda type carrageenan having a concentration useful for accelerating TEOS removal rate.
Claims9
A method of polishing a semiconductor substrate including steps as follows:
- polishing with an aqueous polishing composition to remove TEOS from the semiconductor substrate, the composition including 0.05 to 50 weight percent abrasive and 0.001 to 2 weight percent lambda type carrageenan;
- and
- maintaining a hardmask layer selected from at least one of SiC, SiCN and Si3N4.
A method of polishing a semiconductor substrate including steps as follows:
- polishing with an aqueous polishing composition to remove TEOS from the semiconductor substrate, the composition including 0.1 to 50 weight percent abrasive and 0.01 to 1.5 weight percent lambda type carrageenan;
- and
- maintaining a hardmask layer selected from at least one of SiC, SiCN and Si3N4.
A method of polishing a semiconductor substrate including steps as follows:
- polishing with an aqueous polishing composition to remove TEOS from the semiconductor substrate, the composition including 0.2 to 50 weight percent silica abrasive and 0.05 to 1 weight percent lambda type carrageenan;
- and
- maintaining a hardmask layer selected from at least one of SiC, SiCN and Si3N4.
Dependencies are inferred from the claim text.