US 2007/0163995 A1 · PLASMA PROCESSING METHOD, APPARATUS AND STORAGE MEDIUM

Abstract

In etching an insulating film such as an SiOC film or the like, in order to suppress a diameter of a hole or a width of a groove, a pre-processing is performed before performing the etching. In the pre-processing, a processing gas containing CF4 gas and CH3F gas is converted into a plasma, and an opening size of an opening portion of a resist mask is decreased by depositing deposits at a sidewall thereof by using the plasma. Further, in etching the SiOC film, a processing gas containing CF4 gas, CH3F gas, and N2 gas is converted into a plasma by supplying a processing gas atmosphere by using a first high frequency wave for generating the plasma, wherein the electric power divided by a surface area of a substrate becomes over 1500 W/70685.8 mm2 (a surface area of a 300 mm wafer), and then the SiOC film is etched.

Claims12

Dependent claims

A plasma processing method for processing a substrate by using a plasma processing apparatus having a first high frequency power supply, wherein the first high frequency power supply is connected to one of an upper electrode and a lower electrode facing to each other and supplies a first high frequency wave to a processing gas atmosphere in order to convert a processing gas into a plasma, the method comprising the steps of:

mounting the substrate, in which a resist mask is laminated on an insulating film made of a low-k film containing silicon and oxygen, on the lower electrode;
supplying the processing gas, which contains CF-based compound made of carbon and fluorine and CHxFy (a sum of x and y equals four, each of them being a natural number), to the processing gas atmosphere;
generating plasma by converting the processing gas into a plasma by supplying the first high frequency wave to the processing gas atmosphere, and decreasing an opening size of an opening portion of the resist mask by depositing deposits at a sidewall thereof;
and
etching the insulating film by using the plasma.

2 more elements

A plasma processing method for processing a substrate by using a plasma processing apparatus having a first high frequency power supply and a second high frequency power supply, wherein the first high frequency power supply is connected to one of an upper electrode and a lower electrode facing to each other and supplies a first high frequency wave to a processing gas atmosphere in order to convert a processing gas into a plasma;

and wherein a second high frequency power supply is connected to the lower electrode and supplies a second high frequency wave, which has a frequency lower than that of the first high frequency wave, to the processing gas atmosphere in order to supply a bias power to the substrate mounted on the lower electrode, the method comprising the steps of:
mounting the substrate, in which a resist mask is laminated on an insulating film made of a low-k film containing silicon and oxygen, on the lower electrode;
supplying the processing gas, which contains CF4, CHxFy (a sum of x and y equals four, each of them being a natural number) and N2, to the processing gas atmosphere;
and
generating the plasma by converting the processing gas into the plasma by supplying the first high frequency wave to the processing gas atmosphere, wherein the electric power supplied to the upper electrode or the lower electrode by the first high frequency wave divided by a surface area of the substrate is equal to or greater than 1500 W/70685.8 mm2, and etching the insulating film by using the plasma by supplying the second high frequency wave to the processing gas atmosphere.

2 more elements

Dependencies are inferred from the claim text.

Plasma processing method, apparatus and storage medium

Life of this patent

Plasma processing method, apparatus and storage medium

Life of this patent

Abstract

Claims12