Charge-free layer by layer etching of dielectrics
AssigneeFreescale Semiconductor, Inc.
InventorsShahid Rauf, Peter Ventzek
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AssigneeFreescale Semiconductor, Inc.
InventorsShahid Rauf, Peter Ventzek
Estimating the term…
A method for etching a dielectric film is provided herein. In accordance with the method, a device (201) is provided which comprises a first chamber (203) equipped with a first gas supply (209) and a second chamber (205) equipped with a second gas supply (215), wherein the second chamber is in communication with the first chamber by way of an acceleration grid (211) having a variable potential. The gas flow into the plasma chamber is oscillated between a first state in which the gas flow into the first chamber has the composition ƒ11 and the gas flow into the second chamber has the composition ƒ21, and a second state in which the gas flow into the first chamber has the composition ƒ12 and the gas flow into the second chamber has the composition ƒ22. The potential applied to the acceleration grid is oscillated such that the voltage applied to the grid is V1 when the gas flow into the plasma chamber is in the first state, and the voltage applied to the grid is V2 when the gas flow into the plasma chamber is in the second state.
A method for etching a material, comprising:
A method for etching a substrate, comprising:
An apparatus for etching a dielectric film, comprising:
Dependencies are inferred from the claim text.