Manganese Alloy Sputtering Target and Method for Producing the Same
AssigneeNippon Mining & Metals Co., Ltd.
InventorYuichiro Nakamura
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Abstract
A manganese alloy sputtering target characterized in that oxygen is 1000 ppm or less, sulfur is 200 ppm or less and a forged texture is provided, and a method for producing a forged manganese alloy target stably by eliminating the drawbacks of manganese alloy that it is susceptible to cracking and has a low rupture strength. A manganese alloy sputtering target which can form a thin film exhibiting high characteristics and high corrosion resistance while suppressing generation of nodules or particles is thereby obtained.
Claims17
A method of manufacturing a manganese alloy sputtering target comprising the steps of obtaining a manganese alloy ingot by a melting method selected from the group consisting of an inductive melting method, an arc melting method, and an electron beam melting method, and forging said manganese alloy ingot at an average actual strain rate of 1×10−2 to 2×10−5 (1/s) to form a forged manganese alloy sputtering target consisting essentially of at least one of Ni, Pd, Pt, Rh, Ir, Au, Ru, Os, Cr and Re, and remnant Mn 39.8 to 98 at %.
Dependencies are inferred from the claim text.