Semiconductor device and manufacturing method thereof

A semiconductor device comprising:

• a first electrode,
• crystalline semiconductor particles over the first electrode,
• a semiconductor layer over the crystalline semiconductor particles, and
• a second electrode over the semiconductor layer,
• wherein:
• the crystalline semiconductor particles of which adjacent particles are fusion-bonded, and in which at least two crystalline semiconductor particles are stacked,
• the crystalline semiconductor particles have a first conductivity type, and
• the semiconductor layer has a second conductivity type which is different from the first conductivity type.

A semiconductor device comprising:

• a first electrode,
• a first semiconductor layer over the first electrode,
• crystalline semiconductor particles over the first semiconductor layer,
• a second semiconductor layer over the crystalline semiconductor particles, and
• a second electrode over the second semiconductor layer,
• wherein:
• the crystalline semiconductor particles of which adjacent particles are fusion-bonded,
• the first semiconductor layer has a first conductivity type, and
• the second semiconductor layer has a second conductivity type which is different from the first conductivity type.

A manufacturing method of a semiconductor device comprising:

• forming a first electrode,
• forming crystalline semiconductor particles over the first electrode, that have a first conductivity type,
• heating the first electrode to fix the crystalline semiconductor particles to the first electrode,
• fusion-bonding adjacent particles of the crystalline semiconductor particles,
• forming a semiconductor layer over the crystalline semiconductor particles, that has a second conductivity type which is different from the first conductivity type, and
• forming a second electrode over the semiconductor layer.

A manufacturing method of a semiconductor device comprising:

• forming a first electrode,
• forming a first crystalline semiconductor particles over the first electrode, that have a first conductivity type,
• heating the first electrode to fix the first crystalline semiconductor particles to the first electrode,
• fusion-bonding adjacent particles of the first crystalline semiconductor particles,
• forming a second crystalline semiconductor particles over the first crystalline semiconductor particles, that have the first conductivity type,
• fusion-bonding adjacent particles of the second crystalline semiconductor particles,
• forming a semiconductor layer over the second crystalline semiconductor particle, that has a second conductivity type which is different from the first conductivity type, and
• forming a second electrode over the semiconductor layer.

A manufacturing method of a semiconductor device comprising:

• forming a first electrode,
• forming a first semiconductor layer over the first electrode, that has a first conductivity type,
• forming crystalline semiconductor particles over the semiconductor layer,
• fusion-bonding the crystalline semiconductor particles,
• forming a second semiconductor layer over the crystalline semiconductor particles, that has a second conductivity type which is different from the first conductivity type, and
• forming a second electrode over the second semiconductor layer.