Cleaning solution for silicon surface and methods of fabricating semiconductor device using the same

Abstract

There are provided a cleaning solution for a silicon surface containing a buffer solution including acetic acid (CH3COOH) and ammonium acetate (CH3COONH4), iodine oxidizer, hydrofluoric acid (HF), and water. In a method for fabricating a semiconductor device, a silicon substrate may have an exposed silicon surface, which may be cleaned using a cleaning solution that contains a buffer solution including acetic acid and ammonium acetate, iodine oxidizer, hydrofluoric acid, and water.

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