Method for cleaning treatment chamber iIn substrate treating apparatus and method for detecting endpoint of cleaning
AssigneeTokyo Electron Limited
InventorsShigenori Ozaki, Hideyuki Noguchi, Yoshiro Kabe, Kazuhiro Isa, Masaru Sasaki
Life of this patent
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Abstract
In a substrate processing apparatus for performing a plasma process on a substrate including a tungsten-containing film, cleaning is performed for a process chamber. This cleaning includes, after the plasma process, supplying a gas containing O2 into the process chamber without setting the process chamber opened to the atmosphere, and generating plasma of the gas to clean the process chamber.
Claims49
A cleaning method for cleaning a process chamber contaminated with metal in a substrate processing apparatus for performing a vacuum process on a substrate, the method comprising:
- after the process, supplying O2 gas and H2 gas and an inactive gas, or O2 gas and H2 gas, into the process chamber without setting the process chamber opened to the atmosphere, and generating plasma of the gas to clean the process chamber.
7-8. (canceled)
A cleaning method for cleaning a process chamber in a substrate processing apparatus for performing a plasma process on a substrate having a metal-containing film, the method comprising:
- after the process, supplying O2 gas and H2 gas and an inactive gas, or O2 gas and H2 gas, into the process chamber without setting the process chamber opened to the atmosphere, and generating plasma of the gas to clean the process chamber.
18-19. (canceled)
(canceled)
A computer program for execution on a computer, which, when executed by the computer, controls a substrate processing apparatus for performing a plasma process on a substrate having a metal-containing film, so as to execute a cleaning method for cleaning a process chamber in the substrate processing apparatus, wherein the method comprises, after the process, supplying O2 gas and H2 gas and an inactive gas, or O2 gas and H2 gas, into the process chamber without setting the process chamber opened to the atmosphere, and generating plasma of the gas to clean the process chamber.
A storage medium that stores a control program for execution on a computer, which, when executed by the computer, controls a substrate processing apparatus for performing a plasma process on a substrate having a metal-containing film, so as to execute a cleaning method for cleaning a process chamber in the substrate processing apparatus, wherein the method comprises, after the process, supplying O2 gas and H2 gas and an inactive gas, or O2 gas and H2 gas, into the process chamber without setting the process chamber opened to the atmosphere, and generating plasma of the gas to clean the process chamber.
A plasma processing apparatus comprising:
- a plasma supply source configured to generate plasma;
- a process container that defines a process chamber for performing a process on a substrate by the plasma;
- a substrate table configured to place the substrate thereon within the process container;
- exhaust means for decreasing pressure inside the process container;
- gas supply means for supplying a gas into the process container;
- and
- a control section configured to conduct control to execute a cleaning method for cleaning a process chamber in a substrate processing apparatus for performing a plasma process on a substrate having a metal-containing film, wherein the method comprises, after the process, supplying O2 gas and H2 gas and an inactive gas, or O2 gas and H2 gas, into the process chamber without setting the process chamber opened to the atmosphere, and generating plasma of the gas to clean the process chamber.
A substrate processing method comprising:
- cleaning a process chamber in a substrate processing apparatus for performing a plasma process on a substrate having a metal-containing film, wherein the cleaning comprises, after the process, supplying O2 gas and H2 gas and an inactive gas, or O2 gas and H2 gas, into the process chamber without setting the process chamber opened to the atmosphere, and generating plasma of the gas to clean the process chamber;
- and
- performing a plasma process on a substrate within the process chamber after the cleaning.
30-34. (canceled)
The cleaning end point detecting method according to claim 38, wherein an oxidation process on the substrate including the tungsten-containing film is a selective oxidation process on a poly-silicon film of a laminated film including the tungsten-containing film and the poly-silicon film.
36-37. (canceled)
A cleaning method for cleaning a process chamber by plasma of a cleaning gas of O2 gas and H2 gas and an inactive gas, or O2 gas and H2 gas, in a plasma processing apparatus for performing a process on a substrate having a metal-containing film formed thereon, the method comprising:
- measuring emission intensity of radicals that increase with progress of cleaning within the process chamber, and detecting a cleaning end point from values thus obtained.
A control program for execution on a computer, which, when executed by the computer, controls a plasma processing apparatus for performing a process on a substrate having a metal-containing film formed thereon, so as to execute a cleaning method for cleaning a process chamber by plasma of a cleaning gas of O2 gas and H2 gas and an inactive gas, or O2 gas and H2 gas, in the plasma processing apparatus, wherein the method comprises measuring emission intensity of radicals that increase with progress of cleaning within the process chamber, and detecting a cleaning end point from values thus obtained.
A computer storage medium that stores a control program for execution on a computer, which, when executed by the computer, controls a plasma processing apparatus for performing a process on a substrate having a metal-containing film formed thereon, so as to execute a cleaning method for cleaning a process chamber by plasma of a cleaning gas of O2 gas and H2 gas and an inactive gas, or O2 gas and H2 gas, in the plasma processing apparatus, wherein the method comprises measuring emission intensity of radicals that increase with progress of cleaning within the process chamber, and detecting a cleaning end point from values thus obtained.
A plasma processing apparatus comprising:
- a plasma supply source configured to generate plasma;
- a process container that defines a process chamber for performing a process on a substrate by the plasma;
- a substrate table configured to place the substrate thereon within the process container;
- exhaust means for decreasing pressure inside the process container;
- gas supply means for supplying a gas into the process container;
- and
- a control section configured to conduct control to execute a cleaning method for cleaning a process chamber by plasma of a cleaning gas of O2 gas and H2 gas and an inactive gas, or O2 gas and H2 gas, in a plasma processing apparatus for performing a process on a substrate having a metal-containing film formed thereon, wherein the method comprises measuring emission intensity of radicals that increase with progress of cleaning within the process chamber, and detecting a cleaning end point from values thus obtained.
(canceled)
A cleaning method for cleaning a process chamber contaminated with metal in a substrate processing apparatus for performing a vacuum process on a substrate, the method comprising:
- after the process, supplying O2 gas alone, or O2 gas and an inactive gas, into the process chamber without setting the process chamber opened to the atmosphere, and generating plasma of the gas to clean the process chamber.
A cleaning method for cleaning a process chamber in a substrate processing apparatus for performing a plasma process on a substrate having a metal-containing film, the method comprising:
- after the process, supplying O2 gas alone, or O2 gas and an inactive gas, into the process chamber without setting the process chamber opened to the atmosphere, and generating plasma of the gas to clean the process chamber.
A computer program for execution on a computer, which, when executed by the computer, controls a substrate processing apparatus for performing a plasma process on a substrate having a metal-containing film, so as to execute a cleaning method for cleaning a process chamber in the substrate processing apparatus, wherein the method comprises, after the process, supplying O2 gas alone, or O2 gas and an inactive gas, into the process chamber without setting the process chamber opened to the atmosphere, and generating plasma of the gas to clean the process chamber.
A storage medium that stores a control program for execution on a computer, which, when executed by the computer, controls a substrate processing apparatus for performing a plasma process on a substrate having a metal-containing film, so as to execute a cleaning method for cleaning a process chamber in the substrate processing apparatus, wherein the method comprises, after the process, supplying O2 gas alone, or O2 gas and an inactive gas, into the process chamber without setting the process chamber opened to the atmosphere, and generating plasma of the gas to clean the process chamber.
A plasma processing apparatus comprising:
- a plasma supply source configured to generate plasma;
- a process container that defines a process chamber for performing a process on a substrate by the plasma;
- a substrate table configured to place the substrate thereon within the process container;
- exhaust means for decreasing pressure inside the process container;
- gas supply means for supplying a gas into the process container;
- and
- a control section configured to conduct control to execute a cleaning method for cleaning a process chamber in a substrate processing apparatus for performing a plasma process on a substrate having a metal-containing film, wherein the method comprises, after the process, supplying O2 gas alone, or O2 gas and an inactive gas, into the process chamber without setting the process chamber opened to the atmosphere, and generating plasma of the gas to clean the process chamber.
Dependencies are inferred from the claim text.