Method of growing oxide thin films
AssigneeASM International N.V.
InventorsEva Tois, Suvi Haukka, Marko Tuominen
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Abstract
Process for producing silicon oxide containing thin films on a growth substrate by the ALCVD method. In the process, a vaporisable silicon compound is bonded to the growth substrate, and the bonded silicon compound is converted to silicon dioxide. The invention comprises using a silicon compound which contains at least one organic ligand and the bonded silicon compound is converted to silicon dioxide by contacting it with a vaporised, reactive oxygen source, in particular with ozone. The present invention provides a controlled process for growing controlling thin films containing SiO2, with sufficiently short reaction times.
Claims15
1-33. (canceled)
An atomic layer deposition (ALD) process for producing a thin film comprising silicon dioxide on a substrate comprising:
- contacting a substrate with a vaporized silane compound such that the silicon compound bonds to the substrate, the silane compound comprising at least one organic ligand and at least two silicon atoms;
- and
- converting the silicon compound into silicon dioxide by contacting it with a reactive vaporized oxygen source compound.
Dependencies are inferred from the claim text.