Laser processing method
AssigneeHamamatsu Photonics K.K.
InventorsKenshi Fukumitsu, Fumitsugu Fukuyo, Naoki Uchiyama
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AssigneeHamamatsu Photonics K.K.
InventorsKenshi Fukumitsu, Fumitsugu Fukuyo, Naoki Uchiyama
Estimating the term…
The present invention provides a laser processing method comprising the steps of attaching a protective tape 25 to a front face 3 of a wafer 1a, irradiating a substrate 15 with laser light L while employing a rear face of the wafer 1a as a laser light entrance surface and locating a light-converging point P within the substrate 15 so as to form a molten processed region 13 due to multiphoton absorption, causing the molten processed region 13 to form a cutting start region 8 inside by a predetermined distance from the laser light entrance surface along a line 5 along which the object is intended to be cut in the wafer 1a, attaching an expandable tape 23 to the rear face 21 of the wafer 1a, and expanding the expandable tape 23 so as to separate a plurality of chip parts 24 produced upon cutting the wafer 1a from the cutting start region 8 acting as a start point from each other.
A laser processing method for cutting a flat object to be processed including a substrate and a laminate part disposed on the substrate,
A laser processing method for cutting a flat object to be processed including a substrate and a laminate part disposed on the substrate,
A laser processing method for cutting a flat object to be processed including a substrate and a laminate part disposed on the substrate,
A laser processing method for cutting a flat object to be processed including a semiconductor substrate and a laminate part disposed on the semiconductor substrate,
A laser processing method for cutting a flat object to be processed including a semiconductor substrate and a laminate part disposed on the semiconductor substrate,
A laser processing method for cutting a flat object to be processed including a semiconductor substrate and a laminate part disposed on the semiconductor substrate,
A method of manufacturing a semiconductor device formed using a laser processing method for cutting a flat object to be processed including a substrate and a laminate part disposed on the substrate, the manufacturing method comprising:
A method of manufacturing a semiconductor device formed using a laser processing method for cutting a flat object to be processed including a substrate and a laminate part disposed on the substrate, the manufacturing method comprising:
A method of manufacturing a semiconductor device formed using a laser processing method for cutting a flat object to be processed including a substrate and a laminate part disposed on the substrate, the manufacturing method comprising:
A method of manufacturing a semiconductor device formed using a laser processing method for cutting a flat object to be processed including a semiconductor substrate and a laminate part disposed on the semiconductor substrate, the manufacturing method comprising:
A method of manufacturing a semiconductor device formed using a laser processing method for cutting a flat object to be processed including a semiconductor substrate and a laminate part disposed on the semiconductor substrate, the manufacturing method comprising:
A method of manufacturing a semiconductor device formed using a laser processing method for cutting a flat object to be processed including a semiconductor substrate and a laminate part disposed on the semiconductor substrate, the manufacturing method comprising:
Dependencies are inferred from the claim text.