Laser processing apparatus and laser processing process

A method of manufacturing a semiconductor device comprising:

• forming a semiconductor layer over a glass substrate;
• and
• irradiating the semiconductor layer with a harmonic of a laser beam which has a rectangular shape having a width and a length while moving an irradiated region of the semiconductor layer in a direction of the width, the width being smaller than the length,
• wherein 80 to 98% of the irradiated region overlaps with a neighboring irradiated region of the semiconductor layer, and
• wherein the harmonic of the laser beam is a pulse laser beam.

A method of manufacturing a semiconductor device comprising:

• forming a semiconductor layer over a glass substrate;
• and
• irradiating the semiconductor layer with a harmonic of a pulse laser beam having a cross section having a width and a length while moving the substrate in a direction of the width per pulse by a distance smaller than the width,
• wherein 80 to 98% of one irradiated region of the semiconductor layer overlaps with a neighboring irradiated region of the semiconductor layer.

A method of manufacturing a semiconductor device comprising:

• forming a semiconductor layer over a glass substrate;
• and
• irradiating the semiconductor layer with a harmonic of a pulse laser beam which has a rectangular shape having a width and a length and elongated in a direction of the length while moving the substrate in a direction of the width per pulse. by a distance smaller than the width,
• wherein 80 to 98% of one irradiated region of the semiconductor layer overlaps with a neighboring irradiated region of the semiconductor layer.

A method of manufacturing a semiconductor device comprising:

• forming a semiconductor layer over a glass substrate;
• and
• irradiating the semiconductor layer with a harmonic of a YAG laser beam having a cross section having a width and a length while moving an irradiated region of the semiconductor layer in a direction of the width,
• wherein 80 to 98% of the irradiated region overlaps with a neighboring irradiated region of the semiconductor layer, and
• wherein the YAG laser beam is a pulse laser beam.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a semiconductor layer over a glass substrate;
• and
• irradiating the semiconductor layer with a harmonic of a rectangular YAG laser beam having a width and a length and elongated in a direction of the length while moving an irradiated region of the semiconductor layer in a direction of the width,
• wherein 80 to 98% of the irradiated region overlaps with a neighboring irradiated region of the semiconductor layer, and
• wherein the YAG laser beam is a pulse laser beam.

A method of manufacturing a semiconductor device comprising:

• forming a semiconductor layer over a glass substrate;
• and
• irradiating the semiconductor layer with a harmonic of a laser beam while moving an irradiated region of the semiconductor layer in one direction with respect to the laser beam,
• wherein the harmonic of the laser beam is a pulse laser beam, and
• wherein the number of pulses irradiated on one irradiated region is 5 to 50.

A method of manufacturing a semiconductor device comprising:

• forming a semiconductor layer over a glass substrate;
• and
• irradiating the semiconductor layer with a harmonic of a laser beam which has a rectangular shape having a width and a length while moving an irradiated region of the semiconductor layer in a direction of the width, the width being smaller than the length,
• wherein the harmonic of the laser beam is a pulse laser beam, and
• wherein the number of pulses irradiated on one irradiated region is 5 to 50.

A method of manufacturing a semiconductor device comprising:

• forming a semiconductor layer over a glass substrate;
• and
• irradiating the semiconductor layer with a harmonic of a pulse laser beam having a cross section having a width and a length while moving the substrate in a direction of the width per pulse by a distance smaller than the width,
• wherein the number of pulses irradiated on one irradiated region is 5 to 50.

A method of manufacturing a semiconductor device comprising:

• forming a semiconductor layer over a glass substrate;
• and
• irradiating the semiconductor layer with a harmonic of a pulse laser beam which has a rectangular shape having a width and a length and elongated in a direction of the length while moving the substrate in a direction of the width per pulse by a distance smaller than the width,
• wherein the number of pulses irradiated on one irradiated region is 5 to 50.

A method of manufacturing a semiconductor device comprising:

• forming a semiconductor layer over a glass substrate;
• and
• irradiating the semiconductor layer with a harmonic of a YAG laser beam having a cross section having a width and a length while moving an irradiated region of the semiconductor layer in a direction of the width,
• wherein the YAG laser beam is a pulse laser beam, and
• wherein the number of pulses irradiated on one irradiated region is 5 to 50.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a semiconductor layer over a glass substrate;
• and
• irradiating the semiconductor layer with a harmonic of a rectangular YAG laser beam having a width and a length and elongated in a direction of the length while moving an irradiated region of the semiconductor layer in a direction of the width,
• wherein the YAG laser beam is a pulse laser beam, and
• wherein the number of pulses irradiated on one irradiated region is 5 to 50.