A method for manufacturing a monolithically integrated, multi-layered, thin-film sensor for flaw detection and monitoring, the sensor comprising a thin-film, multi-layer magnetostrictive stack, a thin-film electrically insulating layer, and a thin-film activating layer, the method comprising the steps of:
- magnetron sputtering of alternating layers of a high (hard) magnetostrictive material and a high magnetization (soft) material directly onto a sensing platform, the properties of the composite magnetostrictive layer engineered by adjusting layer thickness, soft/hard layer ratio and sputtering deposition parameters;
- post-annealing the composite magnetostrictive layers in a magnetic bias field;
- depositing a dielectric layer over top of the composite magnetostrictive layer using reactive magnetron sputtering, the dielectric layer to serve as an electrically insulating layer and for resistance to high temperature oxidizing environments;
- and
- depositing an activation layer, the activation layer comprising a conductive planar antenna coil, by means of shadow mask directly on top of the dielectric layer.