Power amplifier and wireless communication device
AssigneeMitsubishi Electric Corporation
InventorsKazuya YAMAMOTO, Tomoyuki ASADA
Life of this patent
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Abstract
There are provided a power amplifying transistor, a bias circuit which supplies a bias current to the base of the power amplifying transistor, a current mirror circuit which detects a peak value of the collector voltage of the power amplifying transistor, and a control circuit which, when the peak value of the collector voltage becomes higher than a voltage set in advance, controls the bias circuit to increase the bias current.
Claims10
A power amplifier comprising:
- a power amplifying transistor;
- a bias circuit which supplies a bias current to the base of the power amplifying transistor;
- a current mirror circuit which detects a peak value of the collector voltage of the power amplifying transistor;
- and
- a control circuit which, when the peak value of the collector voltage becomes higher than a voltage set in advance, controls the bias circuit to increase the bias current.
A power amplifier comprising:
- a power amplifying transistor;
- a bias circuit which supplies a bias current to the base of the power amplifying transistor;
- a current mirror circuit which detects a peak value of the collector voltage of the power amplifying transistor;
- and
- a control circuit which raises a load curve of the power amplifying transistor when the peak value of the collector voltage becomes higher than a voltage set in advance.
A wireless communication device comprising:
- an antenna terminal for performing transmission and reception of signals;
- a baseband signal processing section which demodulates and decodes a received signal, and which encodes and modulates a signal to be transmitted;
- an RF circuit which converts a signal output from the baseband signal processing section into a signal of a predetermined frequency;
- and
- a power amplifier which amplifies a signal output from the RF circuit, the power amplifier having:
- a power amplifying transistor;
- a bias circuit which supplies a bias current to the base of the power amplifying transistor;
- a current mirror circuit which detects a peak value of the collector voltage of the power amplifying transistor;
- and
- a control circuit which, when the peak value from the current mirror circuit becomes higher than a voltage set in advance, controls the baseband signal processing section to reduce the power of the signal input from the RF circuit to the power amplifier.
A power amplifier comprising:
- a power amplifying transistor;
- a bias circuit which supplies a bias current to the base of the power amplifying transistor;
- and
- a current division circuit which computes the quotient of the operating current of the power amplifying transistor and the bias current, and which, when the value of the quotient becomes smaller than a value set in advance, controls the bias circuit to increase the bias current.
A power amplifier comprising:
- a power amplifying transistor;
- a bias circuit which supplies a bias current to the base of the power amplifying transistor;
- and
- a current division circuit which computes the quotient of the operating current of the power amplifying transistor and the bias current, and which raises a load curve of the power amplifying transistor when the value of the quotient becomes smaller than a value set in advance.
A wireless communication device comprising:
- an antenna terminal for performing transmission and reception of signals;
- a baseband signal processing section which demodulates and decodes a received signal, and which encodes and modulates a signal to be transmitted;
- an RF circuit which converts a signal output from the baseband signal processing section into a signal of a predetermined frequency;
- and
- a power amplifier which amplifies a signal output from the RF circuit, the power amplifier having:
- a power amplifying transistor;
- a bias circuit which supplies a bias current to the base of the power amplifying transistor;
- and
- a current division circuit which computes the quotient of the operating current of the power amplifying transistor and the bias current, and which, when the value of the quotient becomes smaller than a value set in advance, controls the baseband signal processing section to reduce the power of the signal input from the RF circuit to the power amplifier.
Dependencies are inferred from the claim text.