High-definition cathode ray tube and electron gun
AssigneeAltera Corporation
InventorsThomas Skupien, Byron Zollars
Life of this patent
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Abstract
A high-definition CRT is provided having an electron gun to produce high beam current without increasing spot size and to provide lower electrical power requirements at high beam-modulation frequencies. The electron gun includes three electrodes having clusters of apertures to allow collimation of the electron beam from a cathode. The main lens is operated to focus a parallel beam of electrons on a display screen. Methods for manufacturing by mechanical or semiconductor methods are also provided.
Claims10
A method for manufacturing an electron gun, comprising:
- providing a support bracket, the support bracket having a clear aperture and a plurality of alignment holes, the alignment holes being adapted to fit a plurality of first alignment rods, and a plurality of anchor tabs adapted to fit a plurality of second alignment rods;
- providing a plurality of beam-forming electrodes, the electrodes having a plurality of aperture clusters and a plurality of alignment holes adapted to fit the plurality of first alignment rods and a plurality of anchor tabs adapted to fit the plurality of second alignment rods;
- providing one of a cathode or a cathode holder having anchor tabs and a main lens having anchor tabs;
- aligning the cathode or cathode holder, the support bracket and beam-forming electrodes and the main lens by assembling on the first alignment rods;
- and
- affixing the plurality of second alignment rods to the plurality of anchor tabs to form the electron gun.
A method for manufacturing a beam-forming assembly for an electron gun, comprising:
- forming a first doped layer of a semiconductor having a surface;
- forming a first insulating layer on the surface of the first doped layer;
- forming a second doped layer of a semiconductor on the first insulating layer, the second doped layer having a surface;
- forming a second insulating layer on the surface of the second doped layer;
- and
- forming a third doped layer of a semiconductor on the second insulating layer.
Dependencies are inferred from the claim text.