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US 2006/0292835 A1Published application
Element fabrication substrate
AssigneeKabushiki Kaishi Toshiba
InventorsShu Nakaharai, Tsutomu Tezuka, Shinichi Takagi
Life of this patent
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Abstract
A substrate used for fabricating devices thereon includes an insulating film, and a monocrystal Ge thin layer formed on the insulating film in contact therewith, the monocrystal Ge thin layer having a thickness not more than 6 nm. The monocrystal Ge thin layer has a thickness not less than 2 nm and a compressive strain.
Claims7
1-15. (canceled)
A method of manufacturing a substrate on which a semiconductor device is fabricated, the method comprising:
- forming a monocrystal SiGe layer on a monocrystal Si layer formed on an insulating film;
- and
- thermal-oxidizing the monocrystal Si layer and the SiGe layer at an initial oxidation temperature at a first stage and at a final oxidation temperature lower than the initial oxidation temperature at a final stage to form a Si oxide film on the Si layer and the SiGe layer on a side opposite to the insulating film and to form a monocrystal Ge layer having a compressive strain.
Dependencies are inferred from the claim text.