Methods of forming devices associated with semiconductor constructions

A method of forming devices associated with a semiconductor construction, comprising:

• providing a semiconductor substrate, the substrate having a memory array region and a peripheral region proximate the memory array region;
• the substrate having recessed access device trenches within the memory array region, and having gate line corridors within the peripheral region;
• forming silicon-containing material within the recessed access device trenches and within the gate line corridors, the silicon-containing material within the gate line corridors and recessed access device trenches being first and second portions of the silicon-containing material, respectively;
• forming a first metal-containing layer over the first and second portions of the silicon-containing material;
• utilizing metal from the first metal-containing layer to convert upper regions of the first and second portions of the silicon-containing material to first and second portions of a first metal silicide, respectively;
• the converted upper regions of the first and second portions of the silicon-containing material being over non-converted lower regions of the first and second portions of the silicon-containing material;
• forming a barrier layer over the first portion of the first metal silicide;
• forming a second metal-containing layer over the barrier layer and over the second portion of the first metal silicide;
• and
• utilizing metal from the second metal-containing layer to convert at least some of the lower region of the second portion of the silicon-containing material to a second metal silicide.

A method of forming devices associated with a semiconductor construction, comprising:

• providing a semiconductor substrate, the substrate having a memory array region and a peripheral region proximate the memory array region;
• the substrate having recessed access device trenches within the memory array region, and having gate line corridors within the peripheral region;
• forming silicon-containing material within the recessed access device trenches and within the gate line corridors;
• forming a metal-containing layer over the silicon-containing material, the metal-containing layer having a first portion directly over the recessed access device trenches and having a second portion directly over the gate line corridors;
• the first portion of the metal-containing layer being substantially thicker than the second portion of the metal-containing layer;
• and
• utilizing metal from the metal-containing layer to convert silicon-containing material within the gate line corridors to metal silicide and to convert silicon-containing material within the recessed access device trenches to metal silicide.