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US 2006/0237812 A1Published application
Electronic emitters with dopant gradient
OwnerDavid Catheyinventor
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Abstract
Electron emitters and a method of fabricating emitters are disclosed, having a concentration gradient of impurities, such that the highest concentration of impurities is at the apex of the emitters and decreases toward the base of the emitters. The method comprises the steps of doping, patterning, etching, and oxidizing the substrate, thereby forming the emitters having impurity gradients.
Claims5
An in-process semiconductor device, comprising:
- a surface;
- a pillar extending from said surface and having an etchability that decreases toward said surface;
- and
- a dopant above said surface, in said pillar, and having a concentration commensurate with said etchability.
1 more element
An in-process field emission device, comprising:
- a substrate;
- and
- a stalk extending from said substrate, further comprising:
- an emitter having:
- an apex, and
- a base, and
- an oxide around said emitter, wherein said oxide has a plurality of thicknesses, including:
- a first thickness at said base, and
- a greater second thickness at said apex.
6 more elements
Dependencies are inferred from the claim text.