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US 2006/0234852 A1Published application
High K-gate oxide TFTs built on transparent glass or transparent flexible polymer substrate
AssigneeMassachusetts Institute of Technology
InventorsIl-Doo Kim, Harry Tuller
Life of this patent
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Abstract
A transparent thin film transistor device includes a transparent substrate, and a high dielectric constant insulator layer disposed over the transparent substrate at a defined temperature. A transparent semiconductor layer is disposed over the insulator layer.
Claims24
A transparent thin film transistor device comprising:
- a transparent substrate;
- a high dielectric constant insulator layer disposed over the transparent substrate at a defined temperature;
- and
- a transparent semiconductor layer disposed over the insulator layer.
1 more element
A method of developing a transparent thin film transistor device comprising:
- providing a transparent substrate;
- forming a high dielectric constant insulator layer disposed over the transparent substrate at a defined temperature;
- and
- forming a transparent semiconductor layer disposed over the insulator layer.
1 more element
Dependencies are inferred from the claim text.