Contact doping and annealing systems and processes for nanowire thin films
AssigneeNanosys, Inc.
InventorsYaoling Pan, David Stumbo
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Abstract
Embodiments of the present invention are provided for improved contact doping and annealing systems and processes. In embodiments, a plasma ion immersion implantation (PIII) process is used for contact doping of nanowires and other nanoelement based thin film devices. According to further embodiments of the present invention, pulsed laser annealing using laser energy at relatively low laser fluences below about 100 mJ/cm2 (e.g., less than about 50 mJ/cm2, e.g., between about 2 and 18 mJ/cm2) is used to anneal nanowire and other nanoelement-based devices on substrates, such as low temperature flexible substrates, e.g., plastic substrates.
Claims74
A method for annealing at least one nanowire on a specimen, the method comprising irradiating portions of the at least one nanowire on the specimen with at least a first laser having a laser fluence of less than about 100 mJ/cm2.
A method for annealing at least one nanowire on a specimen, comprising emitting a laser beam at regions of the at least one nanowire to cause annealing of the regions, wherein the laser beam has a wavelength in the visible light range.
A method of making a field effect transistor on an active device area of a device substrate, comprising:
- (a) depositing on a device substrate at least one nanowire;
- (b) implanting dopant ions into at least source and drain regions of the at least one nanowire to form source and drain contact junctions;
- and
- (c) performing a laser thermal anneal with a pulsed laser having a fluence of less than about 100 mJ/cm2 to activate said dopant ions within said source and drain contact junctions.
A system comprising:
- a substrate comprising at least one nanowire deposited thereon;
- at least a first laser source that emits a laser beam with a fluence of less than about 100 mJ/cm2 to regions of the at least one nanowire on the substrate;
- and
- wherein said laser beam is pulsed to cause annealing of the regions.
A method for doping portions of at least one nanowire on a specimen, comprising:
- (a) enclosing the specimen in a chamber, wherein the specimen includes the at least one nanowire thereon having at least one exposed portion;
- (b) coupling an electrical potential to the specimen;
- and
- (c) sourcing a plasma into the chamber, the plasma including ions of a doping material;
- whereby the ions from the plasma implant the at least one exposed portion of the at least one nanowire.
Dependencies are inferred from the claim text.