Method of forming material using atomic layer deposition and method of forming capacitor of semiconductor device using the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJae-Hyun Yeo, Young-Sun Kim, Sung-Tae Kim, In-Sung Park, Gi-Vin Im
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Abstract
Disclosed are methods of forming dielectric materials using atomic layer deposition (ALD) and methods of forming dielectric layers from such materials on a semiconductor device. The ALD process utilizes a first reactant containing at least one alkoxide group that is chemisorbed onto a surface of a substrate and then reacted with an activated oxidant that contains no hydroxyl group to form a dielectric material exhibiting excellent step coverage and improved leakage current characteristics.
Claims17
A method of forming a layer of material on a substrate surface using atomic layer deposition (ALD) comprising the steps of:
- chemisorbing an alkoxide vapor onto the substrate surface to form an alkoxide layer;
- and
- reacting the alkoxide layer with an activated oxidant that does not include a hydroxyl group to form the layer of material on the substrate surface.
A method of forming a layer of material on a substrate surface according to claim 6, wherein the alkoxide includes a hafnium alkoxide.
A method of forming a thin film using atomic layer deposition (ALD) comprising, in order:
- (a) placing a substrate into a chamber;
- (b) introducing a first reactant into the chamber, the first reactant including an alkoxide;
- (c) chemisorbing a portion of the first reactant onto the substrate to form an alkoxide layer;
- (d) removing a non-chemisorbed portion of the first reactant from the chamber;
- (e) introducing a second reactant into the chamber, the second reactant including an activated oxidant that does not contain a hydroxyl group;
- (f) chemically reacting a portion of the second reactant with the alkoxide layer to form a thin film of oxide as an atomic layer on the substrate;
- and
- (g) removing a non-reacted portion of the second reactant from the chamber.
Dependencies are inferred from the claim text.