Film forming method
AssigneeTokyo Electron Limited
InventorsShintaro Aoyama, Masanobu Igeta, Kazuyoshi Yamazaki
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Abstract
A film forming method for forming an oxide film on a surface of a substrate to be processed in a processing vessel at a predetermined processing temperature, wherein the method includes a temperature elevating step of elevating a temperature of said substrate to a predetermined processing temperature, the step of elevating the temperature including a step of holding the substrate in an atmosphere containing oxygen before the substrate reaches a temperature of 450° C. The film forming method further comprises, after the step of elevating the temperature, a film forming step of forming a radical oxide film by irradiating the substrate surface with energy capable of exciting an oxygen gas.
Claims26
A film forming method for forming an oxide film on a surface of a substrate to be processed in a processing vessel at a predetermined processing temperature, said method comprising:
- a temperature elevating step of elevating a temperature of said substrate to a predetermined processing temperature,
- said step of elevating the temperature including a step of holding said substrate in an atmosphere containing oxygen before said substrate reaches a temperature of 450° C., and
- wherein said film forming method further comprises, after said step of elevating the temperature, a film forming step of forming a radical oxide film by irradiating said substrate surface with energy capable of exciting an oxygen gas.
A film forming method, comprising the steps of:
- forming an oxide film on a surface of said substrate to be processed;
- and
- annealing said oxide film in an inert gas atmosphere,
- said step of forming said oxide film comprises the steps of:
- supplying a gas containing oxygen to said substrate surface;
- forming oxygen radicals by exciting said gas containing oxygen by ultraviolet radiation;
- and
- oxidizing said substrate surface with said oxygen radicals,
- said step of oxidizing said substrate surface being carried out at a substrate processing temperature of 450° C. or less,
- said thermal annealing step being carried out at a temperature higher than said substrate processing temperature.
A computer-readable recording medium storing program code means that, when executed, causes a general purpose computer to control a substrate processing apparatus to carry out a film forming method for forming an oxide film on a surface of a substrate to be processed in a processing vessel at a predetermined processing temperature, said method comprising a temperature elevating step of elevating a temperature of said substrate to a predetermined processing temperature,
- wherein said step of elevating the temperature includes a step of holding said substrate in an atmosphere containing oxygen before said substrate reaches a temperature of 450° C.
A computer-readable recording medium storing program code means that, when executed, causes a general purpose computer to control a substrate processing apparatus to carry out a film forming method, comprising the steps of:
- forming an oxide film on a surface of said substrate to be processed;
- and
- annealing said oxide film in an inert gas atmosphere,
- said step of forming said oxide film comprises the steps of:
- supplying a gas containing oxygen to said substrate surface;
- forming oxygen radicals by exciting said gas containing oxygen by ultraviolet radiation;
- and
- oxidizing said substrate surface with said oxygen radicals,
- said step of oxidizing said substrate surface being carried out at a substrate processing temperature of 450° C. or less,
- said thermal annealing step being carried out at a temperature higher than said substrate processing temperature.
Dependencies are inferred from the claim text.