Method for manufacturing semiconductor device and semiconductor device
AssigneeNEC Electronics Corporation
InventorsTatsuya Suzuki, Hidemitsu Aoki
Life of this patent
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Abstract
A first oxide film and a second oxide film 16 are formed in a first region 13a and a second region 13b, respectively, on the surface of the semiconductor substrate 10, via thermal oxidization method, and the first oxide film is removed while the second oxide film 16 is covered with the resist layer 18 formed thereon, and then the resist layer 18 is removed with a chemical solution containing an organic solvent such as isopropyl alcohol as a main component. Subsequently, a third oxide film 22 having different thickness than the second oxide film 16 is formed in the first region 13a.
Claims30
A method for manufacturing a semiconductor device, comprising the step of wet-processing the surface of a semiconductor substrate with a chemical solution containing an organic solvent as a main component, wherein at least a part of the semiconductor substrate is exposed while the chemical solution is processed thereon.
A semiconductor device comprising:
- a semiconductor substrate;
- and
- a first gate insulating film and a second gate insulating film formed in different regions, respectively, on said semiconductor substrate,
- wherein said first gate insulating film comprises a first insulating film and first high-k film formed on said first insulating film and said second gate insulating film comprises a second insulating film and a second high-k film formed on said second insulating film,
- wherein said second insulating film has a different thickness or is of a different material than that of said first insulating film, and
- wherein said first high-k film and said second high-k film are formed of a material selected from the group consisting of zirconium, hafnium, lanthanoid, aluminum, indium, gallium, and oxides thereof, and have higher dielectric constants than that of silicon oxide.
A method for manufacturing a semiconductor device, comprising:
- forming an insulating film on a semiconductor substrate, said insulating film comprising at least a high-k insulating film that has a higher dielectric constant than that of the silicon oxide film;
- selectively removing said insulting film via a wet etching with a chemical solution containing an organic solvent as a main component to partially expose said surface of said semiconductor substrate;
- before said selectively removing said insulating film via a wet etching, forming a patterned protective film having a predetermined geometry on said insulating film;
- and
- selectively removing a part of said high-k insulating film via a dry etching utilizing said protective film as a mask.
Dependencies are inferred from the claim text.