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US 2006/0234511 A1Published application
Method for forming a semiconductor device including a plasma ashing treatment for removal of photoresist
AssigneeElpida Memory, Inc.
InventorMasahiko Ohuchi
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Abstract
A method for forming a cylindrical capacitor having a metal-nitride bottom electrode, capacitor insulation film and a top electrode in a DRAM device includes the step of forming a photoresist film on the bottom electrode in a cylindrical hole, removing the photoresist film by using a plasma ashing treatment using non-oxygen gas, and consecutively forming the insulation film and the top electrode on the bottom electrode. The plasma ashing treatment uses a bias power for accelerating the plasma gas into the cylindrical trench.
Claims10
A method for manufacturing a semiconductor device comprising the steps of:
- forming an insulation film on a surface of a semiconductor substrate;
- forming a trench in said insulation film;
- forming a metal nitride film on said insulation film including a surface of said trench;
- forming a photoresist film at least within said trench on said metal nitride film;
- removing a portion of said metal nitride film on said insulation film;
- and
- removing said photoresist film by using a plasma-enhanced ashing treatment using plasma of a non-oxygen gas including therein no oxygen.
4 more elements
Dependencies are inferred from the claim text.