Semiconductor memory device and method for manufacturing semiconductor memory device
AssigneeElpida Memory, Inc.
InventorShinpei Iijima
Life of this patent
Estimating the term…
Abstract
According to an aspect of the present invention, there is provided a semiconductor memory device. The semiconductor memory device is provided with an insulator and a capacitor. The capacitor is provided with a lower electrode provided with an inner portion and an outer portion, a dielectric portion on the lower electrode, and an upper electrode on the dielectric portion. The inner portion is provided with a lower part and an upper part upwardly extending from the lower part. The insulator laterally holds the lower part. The outer portion is arranged on the insulator and is electrically connected with the upper part.
Claims20
A semiconductor memory device, comprising an insulator and a capacitor, wherein:
- the capacitor comprises a lower electrode provided with an inner portion and an outer portion, a dielectric portion on the lower electrode, and an upper electrode on the dielectric portion;
- the inner portion comprises a lower part and an upper part upwardly extending from the lower part;
- the insulator laterally holds the lower part;
- and
- the outer portion is arranged on the insulator and is electrically connected with the upper part.
A method for manufacturing a semiconductor memory device comprising a capacitor provided with a lower electrode, a dielectric portion and an upper electrode, the method comprising:
- providing a semiconductor substrate comprising a first insulator;
- forming a second insulator on the first insulator;
- forming an outer portion mounted on the second insulator;
- forming a hole portion downwardly extending via the outer portion and the second insulator;
- forming an inner portion upwardly extending via the hole portion and being in contact with the outer portion at the hole portion, wherein the inner portion and the outer portion constitute the lower electrode;
- exposing at least a part of the lower electrode;
- forming the dielectric portion on the exposed part of the lower electrode;
- and
- forming the upper electrode on the dielectric portion.
Dependencies are inferred from the claim text.