Substrate processing apparatus and substrate processing method

A substrate processing apparatus, comprising:

• a loading/unloading section for carrying in and carrying out a substrate;
• an electrolytic processing unit for electrolytically removing a surface of the substrate having a to-be-processed film formed therein, said electrolytic processing unit including a feeding section that comes into contact with the surface of the substrate;
• an etching unit for etching away the to-be-processed film remaining unprocessed at the portion of the substrate that has been in contact with the feeding section in the electrolytic processing unit;
• and
• a transfer device for transferring the substrate within the substrate processing apparatus, wherein the electrolytic processing unit comprises:
• (i) a processing electrode that can come close to or into contact with the substrate;
• (ii) a feeding electrode as the feeding section for feeding electricity to the substrate;
• (iii) an ion exchanger disposed between the substrate and at least one of the processing electrode and the feeding electrode;
• (iv) a power source for applying a voltage between the processing electrode and the feeding electrode;
• and
• (v) a fluid supply section for supplying pure water or a liquid having an electric conductivity of not more than 500 μS/cm between the substrate and at least one of the processing electrode and the feeding electrode in which the ion exchanger is disposed.

A substrate processing method, comprising:

• electrolytically processing a surface of a substrate having a to-be-processed film formed therein while allowing a feeding member to be in contact with the surface of the substrate;
• etching away the to-be-processed film remaining unprocessed at the portion of the substrate that has been in contact with the feeding member;
• and
• chemically and mechanically polishing the surface of the substrate after the etching.

A substrate processing method, comprising:

• electrolytically processing a surface of a substrate having a to-be-processed film formed therein;
• and
• etching away the to-be-processed film remaining unprocessed at the portion of the substrate that has been in contact with the feeding member, wherein the electrolytic processing comprises:
• allowing a processing electrode to be close to or in contact with the substrate while feeding electricity to the substrate by a feeding electrode as a feeding member;
• disposing an ion exchanger between the substrate and at least one of the processing electrode and the feeding electrode;
• supplying pure water or a liquid having an electric conductivity of not more than 500 μS/cm between the substrate and at least one of the processing electrode and the feeding electrode in which the ion exchanger is disposed;
• and
• applying a voltage between the processing electrode and the feeding electrode.

A substrate processing method, comprising:

• embedding an interconnect material into fine trenches for interconnects formed in a surface of a substrate;
• removing an unnecessary interconnect material and flattening the surface of the substrate;
• further removing the interconnect material by electrolytic processing to thereby form recesses for filling in an upper portion of said fine trenches;
• and
• forming a protective film selectively in the recesses for filling.

A substrate processing apparatus, comprising:

• a head section for holding a substrate;
• a plating section for electroplating the surface of the substrate to form a plated metal film;
• a cleaning section for cleaning the substrate after the plating;
• and
• an electrolytic processing section for carrying out electrolytic removal processing of at least said metal film on the substrate by allowing an ion exchanger to be present between the substrate after the cleaning and an electrode, and applying a voltage between the substrate and the electrode in the presence of a liquid;
• wherein the head section is capable of moving between the plating section, the cleaning section and the electrolytic section while holding the substrate.

A substrate processing apparatus, comprising:

• a head section for holding a substrate;
• a plating section for electroplating the surface of the substrate to form a plated metal film;
• a cleaning section for cleaning the substrate after the plating;
• and
• an electrolytic processing section, which has a processing electrode, for carrying out electrolytic removal processing of at least said metal film on the substrate by applying a voltage between the substrate after the cleaning and the processing electrode in the presence of a liquid;
• wherein the head section is capable of moving between the plating section, the cleaning section and the electrolytic section while holding the substrate.

A substrate processing method, comprising;

• plating a surface of a substrate;
• cleaning the substrate after the plating;
• and
• carrying out electrolytic removal processing by allowing an ion exchanger to be present between the substrate after the cleaning and an electrode, and supplying a liquid having an electric conductivity of not more than 500 μS/cm between the substrate and the electrode;
• wherein the plating, the cleaning and the electrolytic processing are carried out repeatedly at least two times.

A substrate processing method, comprising:

• plating a surface of a substrate;
• cleaning the surface of the substrate after the plating;
• and
• electrolytically processing the surface of the substrate after the cleaning by applying a voltage between the substrate and a processing electrode in the presence of a liquid;
• wherein the plating, the cleaning and the electrolytic processing are carried out repeatedly at lease two times.

A substrate processing method, comprising:

• embedding an interconnect material into fine trenches for interconnects formed in a surface of a substrate;
• removing an unnecessary interconnect material and flattening the surface of the substrate;
• further removing the interconnect material by chemical mechanical polishing to thereby form recesses for filling in an upper portion of said fine trenches;
• and
• forming a protective film selectively in the recesses for filling.