Selective deposition of silicon-containing films
AssigneeASM America, Inc.
InventorsMatthias Bauer, Chantal Arena, Ronald Bertram, Pierre Tomasini, Nyles Cody, Paul Brabant, Joseph Italiano, Paul Jacobson, Keith Weeks
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Abstract
Chemical vapor deposition methods use trisilane and a halogen-containing etchant source (such as chlorine) to selectively deposit Si-containing films over selected regions of mixed substrates. Dopant sources may be intermixed with the trisilane and the etchant source to selectively deposit doped Si-containing films. The selective deposition methods are useful in a variety of applications, such as semiconductor manufacturing.
Claims62
A method of selective deposition of a silicon-containing layer over a substrate, comprising:
- providing a substrate, the substrate comprising a first surface having a first surface morphology and a second surface having a second surface morphology different from the first surface morphology;
- intermixing trisilane and chlorine gas to thereby form a feed gas;
- introducing the feed gas to the substrate under chemical vapor deposition conditions;
- and
- selectively depositing a Si-containing layer onto the first surface without depositing on the second surface by said introducing.
A method of forming an integrated circuit, the method comprising:
- patterning a substrate to define exposed semiconductor surfaces and insulating regions;
- and
- providing trisilane and chlorine gas, thereby selectively depositing a Si-containing epitaxial film on the exposed semiconductor surfaces.
A method of depositing a silicon-containing layer over a substrate, comprising:
- providing a substrate disposed within a chamber;
- intermixing trisilane, a halogen-containing etchant gas and a non-hydrogen carrier gas to form a feed gas, and
- introducing the feed gas to the substrate, thereby depositing a silicon-containing layer on the substrate.
An apparatus for depositing semiconductor films, comprising:
- a trisilane vapor source;
- a chlorine gas source;
- a carrier gas source;
- a gas distribution network connecting the trisilane, chlorine and carrier gas sources to a chemical vapor deposition chamber;
- and
- a control system configured to deliver the trisilane and chlorine to the gas distribution network under conditions suited to selectively deposit a silicon-containing layer on portions of a substrate within the chamber without depositing on other portions of the substrate.
Dependencies are inferred from the claim text.