Method of forming titanium nitride layers

A method, comprising:

• performing a deposition process in a first process chamber to form a layer of titanium nitride above a semiconducting substrate;
• transferring said substrate to a second process chamber;
• performing an anneal process on said layer of titanium nitride in a chlorine scavenging ambient within said second process chamber to define an annealed layer of titanium nitride;
• and
• prior to exposing said annealed layer of titanium nitride to an oxygen containing ambient, forming a cap layer on said annealed layer of titanium nitride in said second process chamber.

A method, comprising:

• performing a chemical vapor deposition process in a first process chamber to deposit a layer of titanium nitride above a semiconducting substrate;
• transferring said substrate to a second process chamber;
• performing an anneal process at a temperature within the range of approximately 500-650° C. on said layer of titanium nitride in a chlorine scavenging ambient within said second process chamber to produce an annealed layer of titanium nitride;
• and
• prior to exposing said annealed layer of titanium nitride to an oxygen containing ambient, depositing a cap layer comprised of polysilicon on said annealed layer of titanium nitride in said second process chamber.