Method of forming capacitor of semiconductor device by successively forming a dielectric layer and a plate electrode in a single processing chamber
OwnerJong Parkinventor
Life of this patent
Estimating the term…
Abstract
A capacitor in a semiconductor device is formed by successively forming a dielectric layer and a plate electrode in a single chamber according to an ALD process. The method includes the steps of forming a storage electrode on a semiconductor substrate; loading the semiconductor substrate into an ALD chamber with the storage electrode formed thereon; forming a metal oxide dielectric layer on the storage electrode in the chamber according to an ALD process; and successively forming a metal plate electrode on the metal oxide dielectric layer in the same chamber according to the ALD process.
Claims18
A method of forming a capacitor of a semiconductor device comprising the steps of:
- forming a storage electrode on a semiconductor substrate;
- loading the semiconductor substrate into an ALD chamber with the storage electrode formed thereon;
- forming a metal oxide dielectric layer on the storage electrode in the ALD chamber according to an ALD process;
- and
- successively forming a metal plate electrode on the metal oxide dielectric layer in the same ALD chamber according to the ALD process.
A method for forming a capacitor of a semiconductor device comprising the steps of:
- forming a storage electrode on a semiconductor substrate;
- loading the semiconductor substrate having the storage electrode formed thereon into an ALD chamber;
- forming an HfO2 dielectric layer on the storage electrode in the same ALD chamber according to an ALD process;
- and
- successively forming an HfN plate electrode in the same ALD chamber according to the ALD process.
A method for forming a capacitor of a semiconductor device comprising the steps of:
- forming a storage electrode on a semiconductor substrate;
- loading the semiconductor substrate having the storage electrode formed thereon into an ALD chamber;
- forming an ZrO2 dielectric layer on the storage electrode in the same ALD chamber according to an ALD process;
- and
- successively forming an ZrN plate electrode in the same ALD chamber according to the ALD process.
Dependencies are inferred from the claim text.