US 2006/0234488 A1 · METHODS OF SELECTIVE DEPOSITION OF HEAVILY DOPED EPITAXIAL SiGe

Abstract

The invention generally teaches a method for depositing a silicon film or silicon germanium film on a substrate comprising placing the substrate within a process chamber and heating the substrate surface to a temperature in the range from about 600° C. to about 900° C. while maintaining a pressure in the range from about 0.1 Torr to about 200 Torr. A deposition gas is provided to the process chamber and includes SiH4, an optional germanium source gas, an etchant, a carrier gas and optionally at least one dopant gas. The silicon film or the silicon germanium film is selectively and epitaxially grown on the substrate. One embodiment teaches a method for depositing a silicon-containing film with an inert gas as the carrier gas. Methods may include the fabrication of electronic devices utilizing selective silicon germanium epitaxial films.

Claims13

Dependent claims

A selective epitaxial method for growing a silicon-containing film on a substrate comprising:

placing the substrate within a process chamber at a pressure in a range from about 0.1 Torr to about 200 Torr;
heating the substrate to a temperature in a range from about 500° C. to about 900° C.;
providing a deposition gas comprising SiH4, HCl and a carrier gas;
and
growing the silicon-containing film at a rate between about 50 Å/min and about 600 Å/min.

2 more elements

Dependencies are inferred from the claim text.

Facts

Application

11/420,906Filed 30 May 2006

Priority

10 Oct 2003

Published

19 Oct 2006

Term ends

Not estimatedThe source records don’t support an estimate.

Classification10 codes

H10P 14/2901
Characterised by the substrates: materials
H10D 30/797
Arrangements for exerting mechanical stress on the crystal lattice of the channel regions: being in source or drain regions, e.g. SiGe source or drain
H10P 14/24
Of semiconductor materials: using chemical vapour deposition [CVD]
H10P 14/27
Of semiconductor materials: using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials

METHODS OF SELECTIVE DEPOSITION OF HEAVILY DOPED EPITAXIAL SiGe

Life of this patent

METHODS OF SELECTIVE DEPOSITION OF HEAVILY DOPED EPITAXIAL SiGe

Life of this patent

Abstract

Claims13