Structure for and method of fabricating a high-mobility field-effect transistor
AssigneeInternational Business Machines Corporation
InventorsJack Chu, Steven Koester, Qiqing Ouyang
Life of this patent
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Abstract
A structure and method of fabricating a high-mobility semiconductor layer structure and field-effect transistor (MODFET) that includes a high-mobility conducting channel, while at the same time, maintaining counter doping to control deleterious short-channel effects. The MODFET design includes a high-mobility conducting channel layer wherein the method allows the counter doping to be formed using a standard technique such as ion implantation, and further allows the high-mobility channel to be in close proximity to the counter doping without degradation of the mobility.
Claims15
1-44. (canceled)
A method for forming a semiconductor layer structure comprising the steps of:
- implanting p-type dopants into a relaxed Si1-xGex layer, with a Ge concentration, x, and relaxation, r, such that the in-plane lattice constant is 0.8-2.4% larger than that of bulk Si, such that a portion of said relaxed Si1-xGex layer is doped p-type with a concentration ranging between 1015 and 1019 cm−3;
- activating said p-type dopants by annealing, an activation temperature ranging between about 600° C. and 1100° C.;
- and,
- epitaxially regrowing a multi-layer structure comprising:
- a bottom Si1-zGez buffer layer on top of said relaxed Si1-xGex layer;
- a tensile tensile-strained Si quantum well layer on top of said bottom Si1-zGez buffer layer;
- a top Si1-mGem buffer layer on top of said tensile tensile-strained Si quantum well layer;
- a Si cap layer on top of said top Si1-mGem buffer layer that is under tensile strain.
58-84. (canceled)
Dependencies are inferred from the claim text.