Method of transferring a thin crystalline semiconductor layer
AssigneeThe Regents of the University of California
InventorsMichael Nastasi, Lin Shao, Phillip Thompson, Silvanus Lau, Terry Alford, James Mayer, N. Theodore
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Abstract
A method for transferring a monocrystalline, thin layer from a first substrate onto a second substrate involves epitaxial growth of a sandwich structure with a strained epitaxial layer buried below a monocrystalline thin layer, and lift-off and transfer of the monocrystalline thin layer with the cleaving controlled to happen within the buried strained layer in conjunction with the introduction of hydrogen.
Claims30
A method for transferring a thin semiconductor layer comprising:
- forming a first heterostructure by depositing a non-graded layer of a material of the formula Si1-xGex on a first substrate and thereafter depositing a monocrystalline epitaxial semiconductor layer on the Si1-xGex layer, wherein 0<x<1;
- introducing hydrogen atoms into the first heterostructure and allowing the hydrogen atoms to diffuse into the non-graded layer of Si1-xGex layer of the first heterostructure;
- bonding the semiconductor layer of the first heterostructure to a second substrate to form a second heterostructure;
- and
- splitting the second heterostructure at said Si1-xGex layer, thereby transferring the semiconductor layer from the first heterostructure to the second substrate.
A method for forming a semiconductor structure, the method comprising:
- forming a first heterostructure by depositing a layer of Si1-xCx on a first substrate, wherein 0<x<1, and thereafter depositing a semiconductor layer on the Si1-xCx layer;
- introducing hydrogen atoms into the Si1-xCx layer;
- bonding the first heterostructure to a second substrate to form a second heterostructure;
- and
- splitting said second heterostructure at the Si1-xCx layer.
Dependencies are inferred from the claim text.