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US 2006/0234473 A1Published application
Thin passivation layer on 3D devices
AssigneeIntel Corporation
InventorsLawrence Wong, Grant Kloster, Lawrence Foley
Life of this patent
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Abstract
Embodiments of the invention include a device with stacked substrates. Conducting interconnecting structures of one substrate are bonded to conducting interconnecting structures of another substrate. A passivating layer may be on the conducting interconnecting structures between the substrates and may be formed by an atomic layer deposition process or a with a Langmuir-Blodgett technique.
Claims22
A method, comprising:
- bonding a first substrate to a second substrate to result in electrical connections between conductive interconnecting structures of the first substrate and conductive interconnecting structures of the second substrate;
- forming a passivating layer on conductive interconnecting structures of the first substrate, using a process chosen from a group consisting of an atomic layer deposition process performed before bonding the first substrate to the second substrate, a Langmuir-Blodgett technique performed before bonding the first substrate to the second substrate, and a Langmuir-Blodgett technique performed after bonding the first substrate to the second substrate;
- and
- forming a passivating layer on conductive interconnecting structures of a second substrate, using a process chosen from a group consisting of an atomic layer deposition process performed before bonding the first substrate to the second substrate, a Langmuir-Blodgett technique performed before bonding the first substrate to the second substrate, and a Langmuir-Blodgett technique performed after bonding the first substrate to the second substrate.
1 more element
A device, comprising:
- a first semiconductor substrate with conductive interconnecting structures, the conductive interconnecting structures having side walls extending away from the first semiconductor substrate;
- a second semiconductor substrate with conductive interconnecting structures, the conductive interconnecting structures having side walls extending away from the second semiconductor substrate, the conductive interconnecting structures of the second semiconductor substrate being bonded to the conductive interconnecting structures of the first semiconductor substrate;
- and
- a first passivating layer on the side walls of the conductive interconnecting structures of the first semiconductor substrate, the passivating layer including a first material with molecules having a polar group at an end close to a surface of the conductive interconnecting structures, an organic chain attached to the polar group and extending away from the surface of the conductive interconnecting structures, and a non-polar group attached to the organic chain.
1 more element
A device, comprising:
- a first semiconductor substrate with conductive interconnecting structures, the conductive interconnecting structures having side walls extending away from the first semiconductor substrate;
- a second semiconductor substrate with conductive interconnecting structures, the conductive interconnecting structures having side walls extending away from the second semiconductor substrate, the conductive interconnecting structures of the second semiconductor substrate being bonded to the conductive interconnecting structures of the first semiconductor substrate;
- a first passivating layer on the side walls of the conductive interconnecting structures of the first semiconductor substrate, the first passivating layer comprising a first insulating material;
- and
- wherein a second material substantially the same as the first material is located in a bonded region of the bonded conductive interconnecting structures.
2 more elements
Dependencies are inferred from the claim text.