Method for manufacturing a semiconductor device, as well as a semiconductor substrate
AssigneeSeiko Epson Corporation
InventorTakeshi Saito
Life of this patent
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Abstract
A method for manufacturing a semiconductor device, includes: forming a recognition mark that defines a well-forming region for forming a well on a semiconductor substrate; forming a mask, using the recognition mark, that is patterned so that the well-forming region is opened; introducing an impurity into the well-forming region; performing heat treatment for forming a well by diffusing the impurity; and forming an element isolation region on the semiconductor substrate.
Claims6
A method for manufacturing a semiconductor device, comprising:
- forming a recognition mark that defines a well-forming region for forming a well on a semiconductor substrate;
- forming a mask, using the recognition mark, that is patterned so that the well-forming region is opened;
- introducing an impurity into the well-forming region;
- performing heat treatment for forming a well by diffusing the impurity;
- and
- forming an element isolation region on the semiconductor substrate.
A semiconductor substrate, comprising a recognition mark for forming a well, which is formed before forming an element isolation region.
Dependencies are inferred from the claim text.